Resonant cavity modes in gallium oxide microwires

Abstract

Thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1−x single crystals doped with 3wt. % Te J. Appl. Phys. 113, 073709 (2013) Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials J. Appl. Phys. 113, 063505 (2013) High-pressure synthesis and in-situ high pressure x-ray diffraction study of cadmium tetraphosphide J. Appl. Phys. 113, 053507 (2013) Dielectric and transport properties of bismuth sulfide prepared by solid state reaction method J. Appl. Phys. 113, 043704 (2013) Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

“…Thus, in this study, thin films of ZnO and Cd x Zn 1 x O (x = 0.16) were investigated. Gallium oxide (Ga 2 O 3 ) has the biggest band-gap among the transparent conductive oxides, 4.8 eV , making it interesting for photonics working in the UV and visible wavelength region [3,[10][11][12][13]. However, as in the case of ZnO, it is an intrinsic n-type semiconductor and it has been proven very difficult to obtain p-type doping, which is fundamental for technological applications.…”

“…However, as in the case of ZnO, it is an intrinsic n-type semiconductor and it has been proven very difficult to obtain p-type doping, which is fundamental for technological applications. Nonetheless, its nanowires could be used as effective waveguides and optical doping using rare earth ions in-situ or by ion implantation has been demonstrated [3,13]. In this work we study the viability of ion implantation to incorporate dopants into these nanowires.…”

Influence of Li doping on the morphology and luminescence of Ga2O3microrods grown by a vapor-solid method

“…Besides, a sharp and intense near IR luminescence peak is observed, centred at 717 nm. Red-infrared emission bands and sharp peaks have been previously reported for N [22], Cr [7,11,12] or Eu [8,23] doped gallium oxide at room temperature. However, none of these emissions resembles this very well defined sharp peak shown in figure 3.…”

“…This value is similar to that obtained in Sn doped Ga2O3 [20] and expected for this type of oxide. The influence of Li on the luminescence properties of Ga2O3 is also of high interest as this oxide presents strong luminescence in different regions of the UV-vis-IR range, which can be used for different photonic applications [7][8][9][11][12]. Figure 4(a) shows the CL room temperature emission from the Li doped microrods (solid line), along with the spectrum in the same conditions of the undoped reference sample (dashed line).…”

“…On the other hand, micro-and nanostructures based on this oxide presents further points of interest and have been investigated for several purposes. Some examples are gas sensors [6] exploiting the high surface to volume ratio; multicolour light emitting transparent nanostructures due to its wide band gap suitable to host optically active ions [7][8][9][10]; and waveguiding applications [11] or resonant cavities [12]. The effective doping of small dimensional structures is necessary in order to tune their physical and chemical properties and widen the applications field.…”