Resonant Inversion of Tunneling Magnetoresistance

Tsymbal, Evgeny Y.; Sokolov, Andrei; Sabirianov, Ildar; Doudin, B.

doi:10.1103/physrevlett.90.186602

Cited by 164 publications

(170 citation statements)

References 28 publications

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“…Similar variations have also been observed in defect state mediated resonant tunneling behavior of MTJ. 13 Above conductance blockade is different from a conventional Coulomb blockade effect. In Coulomb blockade regime, the conductance-onset voltage should not exceed the Coulomb charging energy reflected in the Coulomb steps at higher voltages.…”

Section: Space-charge Trap Mediated Conductance Blockade In Tunnel Jumentioning

confidence: 99%

Space-charge trap mediated conductance blockade in tunnel junctions with half-metallic electrodes

Feng

Kim

Han

et al. 2008

Applied Physics Letters

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A conductance blockade effect has been observed in the magnetic tunnel junction consisting of La0.7Sr0.3MnO3 electrodes and a SrTiO3 barrier. The blockade effect is correlated with the space-charge trap states in the barrier. The blockade threshold eVB=128meV is significantly greater than Coulomb charging energy EC=11meV. The blockade can be lifted with a magnetic field, accompanied by a very large magnetoresistance up to 10 000%. The intriging blockade behavior is distinctly different from the conventional Coulomb blockade effect, showing a unique spin-dependent tunneling process mediated by the localized charge trap states.

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Section: Space-charge Trap Mediated Conductance Blockade In Tunnel Jumentioning

confidence: 99%

Space-charge trap mediated conductance blockade in tunnel junctions with half-metallic electrodes

Feng

Kim

Han

et al. 2008

Applied Physics Letters

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“…In particular, issues related to FE stability at the nanoscale [184] and defects known to be important in MTJs (e.g. [185][186][187]) need to be resolved. Nevertheless, the above theoretical and experimental results are very promising to propose alternative solutions for the local manipulation of spin-dependent transport properties.…”

Section: (B) Multi-ferroic Tunnel Junctionsmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

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209

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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“…In particular, they indicate that the sign of the spin polarization at the GPFE interface is voltage dependent. Two phenomena may be at the origin of an inversion of the sign of the TMR: i) the resonant tunneling of electrons via localized defects in the tunnel barrier [28] and ii) the bias dependence of the tunneling spin polarization of at least one of the contacts [12,29]. The resonant tunneling model can be reasonably discarded.…”

mentioning

confidence: 99%

Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

Godel

Kamalakar

Doudin

et al. 2014

Applied Physics Letters

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Spin-based memory and logic devices are the subject of an intense research activity motivated by the perspective to overcome power, performance and architectural bottlenecks of CMOS-based devices. Among potential material candidates in this field, graphene (Gr) carries great expectations because of its unique electronic transport properties. So far, graphene has been employed mainly in "lateral" spintronic devices, where ferromagnetic electrodes are deposited on top of graphene and electron current flows in the plane of the carbon sheet [1,2,3]. In such devices, oxide tunnel barriers (MgO or Al 2 O 3 ) are often inserted between graphene and the ferromagnetic metals to overcome the conductance mismatch problem [4,5], allowing spin-polarized electrons to be efficiently injected into or extracted

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Resonant Inversion of Tunneling Magnetoresistance

Cited by 164 publications

References 28 publications

Space-charge trap mediated conductance blockade in tunnel junctions with half-metallic electrodes

Space-charge trap mediated conductance blockade in tunnel junctions with half-metallic electrodes

Multi-ferroic and magnetoelectric materials and interfaces

Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

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