Resonant modulational instability and self-induced transmission effects in semiconductors: Maxwell-Bloch formalism

Abstract

The nonlinear optical properties of semiconductors near an excitonic resonance are investigated theoretically by using the macroscopic J model [Ostreich and Knorr, Phys. Rev. B 48, 17811 (1993); 50, 5717 (1994)] based on the microscopic semiconductor Bloch equations. These nonlinear properties cause modulational instability of long light pulses with large gain and give rise to a self-induced transmission of short light pulses in a semiconductor. By an example of the latter well-studied effect, the validity of the used macroscopic model is demonstrated, and good agreement is found with both existing theoretical and experimental results

Controlled absorption and all-optical diode action due to collisions of self-induced-transparency solitons

“…The conditions considered in this paper (very short and highintensity pulses, short distances of propagation) are in good agreement with the requirements of semiconductor materials which possess short relaxation times and comparatively high transition dipole moments. The theoretical and experimental results on self-induced transmission in semiconductors were reported, for example, in [17][18][19][20]. Another prospective material for SIT collision experiments is the collection of semiconductor quantum dots which can be considered as artificial two-level atoms with high dipole moments [21,22].…”