Resonant Raman scattering at exciton states tuned by pressure and temperature in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>2</mml:mn><mml:mi>H</mml:mi><mml:msub><mml:mrow><mml:mtext>-MoS</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Livneh, Tsachi; Sterer, Eran

doi:10.1103/physrevb.81.195209

Cited by 128 publications

(152 citation statements)

References 23 publications

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“…It is well known that inducing pressure in MoS 2 results in an increase in the Raman shift ( Fig. 3a) similar to other layered materials 30,32 . Analyses of the high-pressure Raman spectra reveal that the A 1g mode shows three distinct regions ( Fig.…”

Section: A B C Dmentioning

confidence: 66%

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

et al. 2014

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Molybdenum disulphide is a layered transition metal dichalcogenide that has recently raised considerable interest due to its unique semiconducting and opto-electronic properties. Although several theoretical studies have suggested an electronic phase transition in molybdenum disulphide, there has been a lack of experimental evidence. Here we report comprehensive studies on the pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide up to 35 GPa. Our experimental results reveal a structural lattice distortion followed by an electronic transition from a semiconducting to metallic state at B19 GPa, which is confirmed by ab initio calculations. The metallization arises from the overlap of the valance and conduction bands owing to sulphur-sulphur interactions as the interlayer spacing reduces. The electronic transition affords modulation of the opto-electronic gain in molybdenum disulphide. This pressuretuned behaviour can enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.

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Section: A B C Dmentioning

confidence: 66%

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

et al. 2014

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“…This 395 cm À1 mode has been observed for 2H bulk MoS 2 using resonance Raman spectroscopy at low temperature and was named "a" peak. 32,33 Livneh et al 17,32 found that in bulk MoS 2 this mode is constructed from two contributions, which are particularly distinguishable at low temperatures. The two contributions that construct "a" mode are assigned as LA 0 (M) þ TA 0 (M) and LA(M) þ TA(M).…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂

et al. 2015

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Prominent resonance Raman and photoluminescence spectroscopic differences between AA′ and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Resonance Raman and photoluminescence spectra of AA′ and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom will be discussed.

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“…19,20 This however would not clearly explain the different effect of the excitation on different modes of the out-of-plane vibrations in MoTe 2 .…”

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confidence: 79%

“…This property makes this method a valuable complement to atomic force microscopy in determining the number of layers constituting thin flakes of TMD crystals under study. [16][17][18] Important information on the electron-phonon interactions can also be provided by resonant Raman spectroscopy [19][20][21][22] in which the resonances between excitation or scattered photons and electronic excitations is exploited. Motivated by a recent observation by Guo et al 23 that resonance of this type may be anticipated in a monolayer MoTe 2 at the energy of 2.07 eV, we have investigated the Raman scattering in few-layer MoTe 2 using He-Ne laser light with a wavelength of λ=632.8 nm for excitation.…”

Section: Introductionmentioning

confidence: 99%

Raman scattering of few-layers MoTe ₂

Grzeszczyk¹,

Gołasa²,

Zinkiewicz³

et al. 2016

2D Mater.

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We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe2) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with a recent study reported by G. Froehlicher et al 1 we observe a complex structure of the out-of-plane vibrational modes (A1g/A 1 ), which can be explained in terms of interlayer interactions between single atomic planes of MoTe2. In the case of low-energy shear and breathing modes of rigid interlayer vibrations, it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe2 measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M point of the MoTe2 first Brillouin zone.

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Resonant Raman scattering at exciton states tuned by pressure and temperature in2H-MoS2

Cited by 128 publications

References 23 publications

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂

Raman scattering of few-layers MoTe ₂

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Resonant Raman scattering at exciton states tuned by pressure and temperature in2H-MoS2

Cited by 128 publications

References 23 publications

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2

Raman scattering of few-layers MoTe 2

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Product

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Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂

Raman scattering of few-layers MoTe ₂