Resonant tunneling circuit technology: has it arrived?

Seabaugh, Alan; Brar, B.; Broekaert, T.P.E.; Frazier, G.; Morris, Frank

doi:10.1109/gaas.1997.628251

Cited by 21 publications

(13 citation statements)

References 11 publications

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“…However, quantum devices known as resonant tunneling devices (RTDs) and the circuits based on them demonstrate an inherent increased functionality due to the Negative Differential Resistance (NDR) characteristics and the effect of the resulting current-voltage inversion. This paper proposes a CLB design that uses a combination of RTDs and a Multivalued Logic (MVL) signal system, both of which have been shown to increase functional density in logic circuits [1,2]. As the CLB is the core functional element in FPGAs it follows that the functional density of neural networks implemented on these devices will be improved.…”

Section: Introductionmentioning

confidence: 98%

A Quaternary CLB Design Using Quantum Device Technology on Silicon for FPGA Neural Network Architectures

Kelly

McGinnity

Maguire

et al. 2005

Computational Intelligence and Bioinspired Systems

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Abstract. Field Programmable Gate Arrays (FPGAs) are being used as platforms for the digital implementation of intelligent systems. Binary digital systems provide an accurate, robust, stable performance that is free from the drift and manufacturing tolerances associated with analogue systems. However binary systems have a much lower functional density than their analogue counterparts resulting in inefficient use of silicon surface area. A design for a novel Configurable Logic Block (CLB) is presented which retains the robust qualities of digital processing whilst providing increased functional density. The circuit design uses Si/SiGe Inter-band Tunneling Diodes (ITDs) and NMOS/CMOS transistors to create quaternary memory cells in a topology and architecture suited to the implementation of neural networks. The performance of the CLB is simulated in HSPICE and the results are presented.

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Section: Introductionmentioning

confidence: 98%

A Quaternary CLB Design Using Quantum Device Technology on Silicon for FPGA Neural Network Architectures

Kelly

McGinnity

Maguire

et al. 2005

Computational Intelligence and Bioinspired Systems

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“…By exploiting the NDR characteristics of the quantum-effect devices, various innovative circuit topologies have been intensively studied to overcome the performance limit of the conventional circuit topologies by achieving high functionality based on low-power operation for the future highspeed digital IC applications [1]. Among several quantum effect device candidates, the resonant tunneling diode (RTD) is considered to be the most mature nanometer-scale device due to the stable and pronounced NDR characteristics at room temperature and above [2]- [4]. In addition, it has demonstrated the desirable feature of easy compatibility with the conventional-type high-speed device technologies such as heterojunction bipolar transistor (HBT) or high electron mobility transistor [5], [6] contrary to other nanometer-scale devices.…”

Section: Introductionmentioning

confidence: 99%

A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Choi

Jeong

Lee

et al. 2009

IEEE Trans. Nanotechnology

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A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/ heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be onefourth of the current state-of-the-art conventional transistor-based multiplexing IC.Index Terms-Monostable-bistable logic element, multiplexing, quantum effect, resonant tunneling diode.

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“…In III-V material systems, resonant-tunneling diodes (RTD) /transistor integrated circuits have been demonstrated for signal processing and memory applications with high performance, such as ultra-low static power and reduction of circuit complexity [1][2][3]. Many attempts have also been made to develop an integrable Si-based tunnel diode with standard Si technology.…”

Section: Introductionmentioning

confidence: 99%