Resonant tunneling diode as high speed optical/electronic transmitter

Wang, Jue; Al-Khalidi, Abdullah; Zhang, Cui; Ofiare, Afesomeh; Wang, Liquan; Wasige, Edward; Figueiredo, J. M. L.

doi:10.1109/ucmmt.2017.8068497

Cited by 18 publications

(6 citation statements)

References 7 publications

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“…Comparing to a single-RTD device, ideally this double-RTD oscillator can double the output RF power [15]. It has been oscillation fre wireless data electronic bas demonstrated Gbps [18]. H optical modul Firstly, we By superimpo Fig.…”

Section: (B)mentioning

confidence: 99%

Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator

Zhang¹,

Watson²,

Figueiredo³

et al. 2019

Opt. Express

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We report on the direct intensity modulation characteristics of a high-speed resonant tunneling diode-photodetector (RTD-PD) with an oscillation frequency of 79 GHz. This work demonstrates both electrical and optical modulation and shows that RTD-PD oscillators can be utilized as versatile optoelectronic/radio interfaces. This is the first demonstration of optical modulation of an RF carrier using integrated RTD-PD oscillators at microwave frequencies.

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Section: (B)mentioning

confidence: 99%

Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator

Zhang¹,

Watson²,

Figueiredo³

et al. 2019

Opt. Express

Self Cite

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“…RTD operation is based on the resonant tunneling phenomena, providing the transverse current transfer through RTHS layers. This current transfer mechanism is many times quicker than classical current transport, what allows to widen operating frequency range up to THz [2][3][4][5][6][7][8][9][10][11]. Additionally, shape of RTD's current-voltage (I-V) characteristic is very sensitive to variation of the RTHS' layers thicknesses and chemical composition, what allows to design RTHS with optimal I-V characteristics for certain FCs [12,13].…”

Section: Introductionmentioning

confidence: 99%

Spacer layers’ thickness impact on the resonant-tunneling diode’s and frequency mixer’s operational parameters

Cherkasov,

Meshkov,

Makeev

2024

E3S Web Conf.

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The impact of spacer layers’ thickness on the resonant-tunneling diode’s (RTD) current-voltage characteristic and operational parameters of the RTD-based subharmonic mixer was studied during the described research using the software package developed by authors to simulate the RTD’s functional parameters while mixer’s parameters were simulated using existing microelectronic CAD. The research has revealed that the main impact on both RTD’s I-V characteristic’s shape and operational parameters of the studied subharmonic mixers is made by the emitter spacer layer’s thickness while the collector spacer’s thickness’ variation is insignificant in both cases. Such, it is shown that by varying the emitter spacer’s thickness from a single monolayer to twice its nominal value it’s possible to alter the RTD’s peak current from 0,28 to 1,92 of its nominal value. spacer layer’s thickness deviation of ±1 monolayer has a noticeable effect on the studied mixer’s operational parameters, especially on its dynamic range.

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“…Various semiconductor devices are proposed for potential application for MVL implementation. Among them resonant tunnelling diode (RTD) [4][5][6], resonant tunnelling transistor (RTT) [7][8][9] were researched extensively in the past. However, the problem of the RTD and RTT is the ON/OFF ratio and the process compatibility with the existing silicon process.…”

Section: Introductionmentioning

confidence: 99%

“…176-181 © The Institution of Engineering and Technology 2019QDGFET are controlled by the gate voltage applied at the WL and different values can be written in the DRAM cell by storing the different amount of charge in the capacitor. The charging current and stored charge in the capacitor are shown in(6)(7)(8).…”

mentioning

confidence: 99%

Three‐state dynamic random‐access memory (DRAM)

Karmakar

2020

IET Circuits, Devices & Systems

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This work shows the design of three-valued dynamic random-access memory (DRAM) cell using quantum dot gate field effect transistor. DRAM is very popular for increasing device integration in integrated circuits. Storing multiple numbers of bits in a single DRAM cell increases the device integration further. The process technology is compatible with the conventional silicon process. The various write and read operations of the three-value DRAM cell are also discussed in this work. 4 Fabrication The QDGFET can be fabricated using conventional Si process technology. In this process, the cleaned Silicon wafer is used as a starting material for the device. The 1200 Å thick silicon dioxide

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Resonant tunneling diode as high speed optical/electronic transmitter

Abstract: Abstract-

Cited by 18 publications

References 7 publications

Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator

Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator

Spacer layers’ thickness impact on the resonant-tunneling diode’s and frequency mixer’s operational parameters

Three‐state dynamic random‐access memory (DRAM)

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