Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure

Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode

“…In macroscopic diodes this voltage for resonance should be smaller than the flat band voltage of the diode, $0.7 V. In fact, the resonant tunneling was observed at a voltage of $0.52 V in the I-V curves of m-RTDs comprising single InAs QD and a far larger electrode of 0.5 mm  0.5 mm in size, as reported [15]. This shows that the resonant voltage of RTDs is dependent on the electrode size indicating the important role of the fringing part of the diode.…”

“…To study resonant electron tunneling through a single InAs QD without ambiguities, we fabricated earlier sub-micron size resonant tunneling diodes (m-RTDs) in which at most one InAs QD was embedded in each structure through precise control of MBE growth [14], and measured their current-voltage (I-V) characteristics by conductive-tip AFM at temperatures up to $130 K [15]. However, only weak peaks which were attributed to the resonant tunneling through the QD were observed in the I-V curves.…”

Elastic Energy in Inas Quantum Dot-in-a-Well Structures

“…For laser or photodiode applications the surface density of QDs has to be high [9][10][11][12][13][14]. It was shown earlier [3] that the InAs QD density can be increased essentially if the QDs are grown inside of GaAs/capping In0.15Ga0.85As/buffer In0.15Ga0.85As/GaAs quantum wells [3].…”

Thermoelectric power in carbon nanotubes and quantum wires of nonlinear optical, optoelectronic, and related materials under strong magnetic field: Simplified theory and relative comparison

“…An enormous range of important applications in the quantum regime, together with a rapid increase in computing power, have generated much interest in the analysis of nanostructured devices for investigating their properties. [26][27][28][29] Examples of such new applications include various quantum wires, [30][31][32][33][34] quantum resistors, 35 resonant tunneling diodes and band filters, 36,37 quantum switches, 38 quantum sensors, [39][40][41] quantum logic gates, 42,43 quantum transistors and subtuners, [44][45][46] heterojunction field-effect transistors ͑FETs͒, 47 high-speed digital networks, 48 high-frequency microwave circuits, 49 optical modulators, 50 optical switching systems, 51 and other devices. Though extensive work has already been done for both the CNTs and QWs, it appears from the literature that the TPM for both the CNTs and the QWs has yet to be investigated in detail.…”