Resonant Tunneling Transport in Polar III-Nitride Heterostructures

Encomendero, Jimy; Jena, Debdeep; Xing, Huili Grace

doi:10.1007/978-3-030-20208-8_8

Cited by 6 publications

(5 citation statements)

References 83 publications

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“…Even though research on nitride resonant tunneling transport started almost two decades ago [9 and 10], in the past three years important breakthroughs have been achieved due to recent advances in epitaxial growth, polar heterostructure design, and device fabrication [11][12][13][14]. In particular, the demonstration of reliable roomtemperature negative differential conductance (NDC) [12][13][14][15][16][17][18] and the first nitride-based resonant tunneling oscillator [19 and 20] have led to a better understanding of resonant tunneling physics through polar semiconductors. These milestones have reignited interest in the development of practical device applications enabled by nitride resonant tunneling injection.…”

Section: Introductionmentioning

confidence: 99%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Encomendero,

Protasenko,

Rana

et al. 2023

Preprint

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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers, results in highly asymmetric tunneling transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.

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Section: Introductionmentioning

confidence: 99%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Encomendero,

Protasenko,

Rana

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Even though research on nitride resonant tunneling transport started almost two decades ago [9 and 10], in the past three years important breakthroughs have been achieved due to recent advances in epitaxial growth, polar heterostructure design, and device fabrication [11][12][13][14]. In particular, the demonstration of reliable roomtemperature negative differential conductance (NDC) [12][13][14][15][16][17][18], and the first nitride-based resonant tunneling oscillator [19 and 20], have led to a better understanding of resonant tunneling physics through polar semiconductors. These milestones have reignited interest in the development of practical device applications enabled by nitride resonant tunneling injection.…”

Section: Introductionmentioning

confidence: 99%

“…III-Nitride RTD capacitance measured under closeto-equilibrium conditions for the two RTD designs with different contact doping concentrations N + d and N ++ D . Employing our analytical model for polar RTDs we also compute the theoretical RTD capacitance, given by equation (3), for the structure shown in Fig.1(a), while varying the doping concentration between 1×1018 and 1×10 20 cm −3 (blue curves). The agreement between the experimental and theoretical results reveals that polar RTDs behave effectively as parallel-plate capacitors, when the population of the resonant level is negligible.…”

mentioning

confidence: 99%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

et al. 2020

Self Cite

View full text Add to dashboard Cite

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers, leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant tunneling voltage achieved via uniform doping, due to dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant tunneling devices.

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“…Throughout the whole epitaxial process, we monitor the oscillating intensity of the reflection high-energy electron diffraction pattern to measure-in real time-the incorporation of single monolayers. 22,30) These conditions, allow us to maintain the high structural quality of the single-crystal n-GaN substrates, minimizing the presence of crystalline defects and threading dislocations.…”

mentioning

confidence: 99%

Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes

Encomendero

Protasenko

Jena

et al. 2021

Appl. Phys. Express

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Harnessing resonant tunneling transport in III-nitride semiconductors to boost the operating frequencies of electronic and photonic devices, requires a thorough understanding of the mechanisms that limit coherent tunneling injection. Towards this goal, we present a concerted experimental and theoretical study that elucidates the impact of the collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs). Employing our analytical model for polar RTDs, we quantify the width of the resonant-tunneling line shape, demonstrating that the setback helps preserve coherent injection. This design results in consistently higher peak-to-valley-current ratios (PVCRs), obtaining a maximum PVCR = 2.01 at cryogenic temperatures.

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Resonant Tunneling Transport in Polar III-Nitride Heterostructures

Cited by 6 publications

References 83 publications

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes

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