Resonant tunnelling at far infra-red frequencies

Chitta, V. A.; Kutter, Christoph; Bekker, R. E. M. de; Maan, J.C.; Hawksworth, Stuart; Chamberlain, J.M.; Henini, M.; Hill, G.

doi:10.1088/0953-8984/6/21/019

Cited by 20 publications

(36 citation statements)

References 40 publications

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“…The experiments of Chitta et al [3] analyzed the far infrared response (FIR) of double barrier resonant tunneling structures. Their results are shown in Fig.…”

Section: Truncation Methods For Green's Functions In Time-dependent Fimentioning

confidence: 99%

“…Using the above formalism, Iñarrea et al [87,89] studied the experiments of Chitta et al [3], see photon transmission coefficient for coherent tunneling is plotted (field intensity F = 4 × 10 5 V /m, ω = 13.6meV and zero bias voltage). The main features observed in the transmission coefficient T(E), are multiple satellite peaks at both sides of the central one, coming from photon absorption and emission.…”

Section: Transfer Matrix Description Of Photoassisted Coherent Tunnelingmentioning

confidence: 99%

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Photon-assisted transport in semiconductor nanostructures

2004

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In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of different aspects like nonequilibrium, nonlinearity, quantum confinement or electron-electron interactions gives rise to many intriguing new phenomena. Along the review we give many examples which demonstrate the possibility of using appropriate ac fields to control/manipulate coherent quantum states in semiconductor nanostructures.

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“…The experiments of Chitta et al [3] analyzed the far infrared response (FIR) of double barrier resonant tunneling structures. Their results are shown in Fig.…”

Section: Truncation Methods For Green's Functions In Time-dependent Fimentioning

confidence: 99%

Section: Transfer Matrix Description Of Photoassisted Coherent Tunnelingmentioning

confidence: 99%

Photon-assisted transport in semiconductor nanostructures

2004

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“…Recently Chitta et al have studied the far-infrared response of double barrier structures. 13 There is also theoretical work reported, although most of it ignores the electron-electron interaction. We have shown recently that for an external bias near the edges of the bistable region in the I-V curve the interacting system becomes unstable under the passage of terahertz electromagnetic radiation.…”

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confidence: 99%

Terahertz switching action of a double-barrier resonant tunneling device

2000

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The response of an asymmetric double barrier resonant device to the passage of terahertz radiation is discussed. Within the bistable region the radiation is able to turn the current flowing through the system on or off, with an onset that depends on the bias, the strength of the incoming radiation, and its frequency.Resonant tunneling through double-barrier structures has been the subject of much interest for their physical properties and applications as electronic devices. 1 Besides a peak due to simple resonant transmission, an intrinsic dynamical bistability and hysteresis in the negative differential resistance region of the current-voltage characteristic has been reported. [2][3][4][5][6][7] The interior of the bistability has been reached experimentally by employing a load line with positive slope, which turns the characteristic into a Z-shaped tristable curve. 8 The effect is currently understood in terms of the Coulomb repulsion experienced by the incoming electrons from the charge buildup in the space between the barriers. 3 In support of this interpretation is the fact that the width of the bistable region is enhanced by making the collector barrier wider, thus allowing for a more efficient trapping of electrons in the well. 9 A magnetic field along the device provides an additional enhancement and may introduce more complex instabilities. 5,7,10 The effect has also been detected in triple barrier structures. 11 Since the work of Sollner et al. 12 much experimental work has been devoted to the study of the effect of a timedependent potential in resonant tunneling through semiconductor microstructures. Recently Chitta et al. have studied the far-infrared response of double barrier structures. 13 There is also theoretical work reported, although most of it ignores the electron-electron interaction. We have shown recently that for an external bias near the edges of the bistable region in the I-V curve the interacting system becomes unstable under the passage of terahertz electromagnetic radiation. 14 The device can thus act as a detector of radiation in this frequency range, or as a current switch triggered by the passage of radiation. Our results were obtained by direct integration of a Schrödinger equation including a nonlinear Hartree-like term, which gave rise to numerical instabilities and the impossibility of exploring the long-term behavior of the system.In this paper we apply a rate-equation approach to the problem. Tunneling is modeled as a sequential process 15 in which the electrons are transmitted through the double barrier in steps, first from the emitter into the well, and then, from the well into the collector region. Calling k, q, and p the quantum numbers characterizing the state in the emitter, well, and collector regions, respectively, the rate equation for the occupancies f k and f q of the emitter and well states, respectively, are 15where W qk and W qp are the transmission rate from the emitter to well and from the well to the collector region, respectively. We obtain the stored charg...

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“…In this case, the polarization of the electromagnetic field and the tunneling current are in the growth'' direction. Most of resonant-tunneling experiments 10,[20][21][22][23][24][25][26][27][28][29] belong to this configuration. The only difference between 2DEG configurations and layered structures is the typical values of parameters such as electron densities and dimensions of dc potential profiles.…”

Section: Numerical Techniquementioning

confidence: 99%

Simulation studies of photon-assisted quantum transport

Yakubo

Shen

1996

Phys. Rev. B

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Direct numerical simulations were performed to investigate conditions for the strong effects of photonassisted quantum transport. Transmission probabilities of incident electrons as Gaussian wave packets were calculated for single-and double-barrier structures irradiated by electromagnetic fields that were focused within a finite region ac . When the period of the ac electromagnetic field is short compared with the time ac , which is the traversal time of the electrons in the region of the applied ac field, the transmission probability can be affected by photon emission and photon absorption. The magnitude of these effects strongly depends on the width ac and the bound-state character of the electrons. These dependences can be understood from the selection rule, which results from the momentum conservation of the electron and photon system. Consequently, we have shown that photon-assisted transport over a single barrier is difficult to achieve in two-dimensional electron-gas devices due to the relatively long screening length. We have demonstrated, however, that the photon-assisted process is significantly enhanced in double-barrier devices due to quasibound-to-extended-state transitions. ͓S0163-1829͑96͒02435-6͔

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Resonant tunnelling at far infra-red frequencies

Cited by 20 publications

References 40 publications

Photon-assisted transport in semiconductor nanostructures

Photon-assisted transport in semiconductor nanostructures

Terahertz switching action of a double-barrier resonant tunneling device

Simulation studies of photon-assisted quantum transport

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