Resonant tunnelling studies of magnetoelectric quantisation in wide quantum wells

Leadbeater, M.; Alves, E.S.; Eaves, L.; Henini, M.; Hughes, O. H.; Celeste, A.; Portal, J. C.; Hill, G.; Pate, M.A.

doi:10.1088/0953-8984/1/29/014

Cited by 33 publications

(19 citation statements)

References 7 publications

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“…Experiments on stuctures with wide wells (width ω ≈ 1 0 0 n m ) s h o w s e r i e s of closely-spaced, weak resonances [10]. This is expected since the level separation between QW subband decreases and the probability of scattering in the well increases width ω.…”

Section: Resonant Tunnelling In Wide-well Double-barrier Structuresmentioning

confidence: 97%

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Physics of Resonant Tunnelling

Sheard

Fromhold

1992

Acta Phys. Pol. A

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A description is given of resonant tunnelling processes in double-barrier semiconductor heterostructures from the point of view of sequential theory. If a magnetic field is applied in the plane of the barrier interfaces, the energy and transverse momentum of the electrons injected into the quantum well through the emitter tunnel barrier can be varied independently by changing the applied voltage and magnetic field. This technique can be used to probe the energy and momentum spectrum of the subband states in a quantum well. In n-type wide-well structures, a detailed interpretation of niagneto-oscillations in the tunne1 current has been given in terms of semiclassical orbits of electrons in the well. In p-type structures with narrow wells, the dispersion curves of hole subbands, which are complicated by the strong mixing of light hole and heavy hole states, have been directly studied. Resonant tunnelling into the bound state of single donor atks in a quantum well has recently been observed. The magnetic field dependence of the tunnel current then gives a measure of the transverse momentum distribution and hence lateral extent of the donor wave function.

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Section: Resonant Tunnelling In Wide-well Double-barrier Structuresmentioning

confidence: 97%

“…In a transverse magnetic field the classical orbits are cycloids, which may interact with either or both barrier interfaces. We have calculated the dispersion curves Ε(k) for these states in the WKB approximation [10]. In Fig.…”

Section: Resonant Tunnelling In Wide-well Double-barrier Structuresmentioning

confidence: 99%

Physics of Resonant Tunnelling

Sheard

Fromhold

1992

Acta Phys. Pol. A

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“…Существует ряд работ, посвященных колебаниям проводимости гете-роструктур в зависимости от приложенного напряже-ния вследствие оптического излучения [5,6] или из-за квантования энергии движения носителей, ограничен-ных потенциальными барьерами. Например, резонансное туннелирование через уровни в широких квантовых ямах приводит к большому числу хорошо определен-ных пиков дифференциальной проводимости [7,8]. По-хожие квантово-размерные эффекты наблюдались так-же в фототоке оптически возбужденных сверхрешеток p−i−n-GaAs/AlAs [9].…”

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Квантовые осцилляции релаксации фотопроводимости в p-i-n-гетеродиодах GaAs/InAs/AlAs

Ханин¹,

Вдовин²

2018

Физика И Техника Полупроводников

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The photoconductivity and its relaxation characteristics in tunneling p – i – n GaAs/AlAs heterostructures under pulsed illumination is studied. Quantum oscillations in the photoconductivity are detected depending on the bias voltage with the period independent of the light wavelength, as well as an oscillating component of the relaxation curves caused by modulation of the recombination rate at the edge of a triangular quantum well in the undoped i layer, as in the case of photoconductivity oscillations. The common nature of oscillations of the steady-state photoconductivity and relaxation curves under pulsed illumination is directly confirmed by the lack of an oscillating component in both types of dependences of some studied p–i–n heterostructures. Simultaneous suppression of the observed oscillations of dependences of both types as the temperature increases to 80 K also confirms the proposed mechanism of their formation. The dependences of these oscillations on the magnetic field and light flux power are studied. Oscillation-amplitude suppression in a magnetic field of ~2 T perpendicular to the current is caused by the effect of the Lorentz force on the ballistic motion of carriers in the triangular-quantum-well region.

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“…The injection energy is determined by the applied bias voltage. Using a transverse magnetic field (perpendicular to the current flow) to control the momentum of the injected carriers, the magnetotunnelling rates and lateral energy dispersion curves have been determined for electrons and holes [1][2][3].Recent experiments on laterally-gated DBRTS and on GaAs/(AlGa)As DBRTS containing an n-type δ-doped layer in the middle of the quantum well, have revealed resonances in the current-voltage curve below the threshold voltage for resonant tunnelling through the lowest subband minimum of the well [4,5]. These resonances are suppressed by a transverse magnetic field s: 10 T and originate from tunnelling through bound states of the donor impurities.…”

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Theory of Magnetotunnelling through Donors in the Quantum Well of Double-Barrier Resonant-Tunnelling Structures

1992

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The tunne1 current from a two-dimensional electron gas (2DΕG) into donor impurities in the quantum well of a double-barrier heterostructure is studied using the Bardeen Transfer-Hamiltonian formalism. Resonant tunnelling occurs when the donor level lies within the energy range of occupied 2DΕG states. It is shown that in the presence of a magnetic field Β normal to the current flow, the magnetocurrent J(B) is determined by the Fourier probability density of the donor wave function corresponding to the momentum p0 transferred to the tunnelling electrons by the Lorentz force. Then experimental J(B) curves, in principle, directly measure the donor wave function.The magnetocurrent is quenched when p0 greatly exceeds the width of the distribution of momentum Fourier components of the donor wave function.PACS numbers: 73.40. Gk, 71.55.Eq, 85.30.Τv The precision growth of semiconductor heterostructures has permitted systematic studies of a wide range of quantum phenomena. In particular, quantum interference and high-energy electron dynamics have been extensively investigated using double-barrier resonant-tunnelling structures (DBRTS) in which the electrons are injected from a twodimensional electron gas (2DEG) into the subband states of the quantum well. The injection energy is determined by the applied bias voltage. Using a transverse magnetic field (perpendicular to the current flow) to control the momentum of the injected carriers, the magnetotunnelling rates and lateral energy dispersion curves have been determined for electrons and holes [1][2][3].Recent experiments on laterally-gated DBRTS and on GaAs/(AlGa)As DBRTS containing an n-type δ-doped layer in the middle of the quantum well, have revealed resonances in the current-voltage curve below the threshold voltage for resonant tunnelling through the lowest subband minimum of the well [4,5]. These resonances are suppressed by a transverse magnetic field s: 10 T and originate from tunnelling through bound states of the donor impurities.We assume that the donors in the quantum well are essentially non-interacting since in the experiments, the nearest-neighbour separation greatly exceeds the (737)

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Resonant tunnelling studies of magnetoelectric quantisation in wide quantum wells

Cited by 33 publications

References 7 publications

Physics of Resonant Tunnelling

Physics of Resonant Tunnelling

Квантовые осцилляции релаксации фотопроводимости в p-i-n-гетеродиодах GaAs/InAs/AlAs

Theory of Magnetotunnelling through Donors in the Quantum Well of Double-Barrier Resonant-Tunnelling Structures

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