Response of plasmonic terahertz detectors to amplitude modulated signals

Rupper, G.; Rudin, S.; Shur, M. S.

doi:10.1016/j.sse.2015.05.035

Cited by 12 publications

(7 citation statements)

References 17 publications

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“…Our model accounts for the viscosity and pressure gradient effects in the channel, and can be applied to the evaluation of the response to an amplitude-modulated signals, and to estimate the achievable range of modulation frequencies. 31 …”

Section: Discussionmentioning

confidence: 99%

Ultimate response time of high electron mobility transistors

Rudin

Rupper

Shur

2015

Journal of Applied Physics

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Section: Discussionmentioning

confidence: 99%

Ultimate response time of high electron mobility transistors

Rudin

Rupper

Shur

2015

Journal of Applied Physics

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“…The fundamental photonic effects, device configurations, and working mechanisms along with key performance parameters of 2D materials-based photodetectors are summarized in this section, wherein we have focused on photovoltaic effect ( Xiao et al, 2015 ), photo-thermoelectric effect ( Wang et al, 2020 ), photoconductive effect ( Long et al, 2019 ), photogating effect ( Koppens et al, 2014 ), bolometric effect ( Kasirga, 2020 ), and plasma wave assisted mechanisms ( Rupper et al, 2015 ), along with responsivity, detection, quantum efficiency, phot-response time, and photo-conductive gain.…”

Section: Photodetection Mechanisms and Key Performance Parametersmentioning

confidence: 99%

“…The plasma wave-assisted mechanism for terahertz detection indicates that a field-effect transistor (FET) produces a continuous drain-source voltage when it is biased and exposed by wide spectral radiation ( Rupper et al, 2015 ; Dyakonov and Shur, 1996 ). Such a voltage has a resonance or non-resonant relationship with the frequency of the illuminated light and is found maximum at plasma oscillation frequency ( Rupper et al, 2015 ). The electron gas in 2D materials acts as a cavity for a plasma wave.…”

Section: Photodetection Mechanisms and Key Performance Parametersmentioning

confidence: 99%

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

et al. 2022

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Two-dimensional (2D) materials have been widely used in photodetectors owing to their diverse advantages in device fabrication and manipulation, such as integration flexibility, availability of optical operation through an ultrabroad wavelength band, fulfilling of photonic demands at low cost, and applicability in photodetection with high-performance. Recently, transition metal dichalcogenides (TMDCs), black phosphorus (BP), III-V materials, heterostructure materials, and graphene have emerged at the forefront as intriguing basics for optoelectronic applications in the field of photodetection. The versatility of photonic systems composed of these materials enables their wide range of applications, including facilitation of chemical reactions, speeding-up of responses, and ultrasensitive light detection in the ultraviolet (UV), visible, mid-infrared (MIR), and far-infrared (FIR) ranges. This review provides an overview, evaluation, recent advancements as well as a description of the innovations of the past few years for state-of-the-art photodetectors based on two-dimensional materials in the wavelength range from UV to IR, and on the combinations of different two-dimensional crystals with other nanomaterials that are appealing for a variety of photonic applications. The device setup, materials synthesis, operating methods, and performance metrics for currently utilized photodetectors, along with device performance enhancement factors, are summarized.

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“…It has attracted a considerable attention in various fields, including imaging, communication, biotechnology, homeland security and ultra-fast computing. 1 Plasma-wave electronics material is especially promising material systems for the development of terahertz applications, 2 including amplifier, 3 detector, 4 modulator, 5 and oscillator. 6 On the other hand, resonant tunnelling diodes (RTDs) are a kind of quantum effect devices with excellent performance in negative differential conductance (NDC) and high-speed.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

et al. 2018

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In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT). The plasma wave arising from the RTD-gated HEMT is equivalent to active transmission lines and induces negative differential conductance (NDC) of the oscillator. The proposed RTD-gated HEMT oscillator is more compact and has higher oscillation frequency than the transmission line loaded traditional RTD oscillator duo to plasma wave effect. This paper analyses and calculates the oscillation conditions, the relationships between device structures, oscillation frequency and the output power of the oscillator. The presented work may provide a new concept for fabricating terahertz oscillator.

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Response of plasmonic terahertz detectors to amplitude modulated signals

Cited by 12 publications

References 17 publications

Ultimate response time of high electron mobility transistors

Ultimate response time of high electron mobility transistors

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

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