Ultimate response time of high electron mobility transistors

Rudin, S.; Rupper, G.; Shur, M. S.

doi:10.1063/1.4919706

Cited by 32 publications

(33 citation statements)

References 26 publications

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“…25 The device modeled, has a small (4nm) gate-to-channel separation and a 130 nm gate length, so that the UCCM is expected to perform well within the gated region. The results shown in Figure 4c are in excellent agreement with the results of the electro-optic measurements and simulations in the frame of the hydrodynamic model described in 24 . This model predicted the ultra-fast transistor plasmonic response in full agreement with our measurement results.…”

Section: Resultssupporting

confidence: 84%

New optical gating technique for detection of electric field waveforms with subpicosecond resolution

et al. 2016

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The new optical gating technique uses a femtosecond optical laser pulses for the photoconductive detection of short pulses of terahertz (THz) radiation. This technique reproduces the shape of the THz pulse and after pulse plasmonic response of the two-dimensional electron gas in a short channel high electron mobility transistor (HEMT). The results are in excellent agreement with the electro-optic effect measurements and with the simulation results obtained in the frame of a two-dimensional hydrodynamic model. The femtosecond optical laser pulse time is delayed with respect to the THz pulse and generates a large concentration of the electron-hole pairs in the AlGaAs/InGaAs HEMT. This drastically increases the channel conductivity on the femtosecond scale and effectively shorts the device quenching the transistor response. The achieved time resolution is better than 250 femtoseconds and could be improved using shorter femtosecond laser pulses. The spatial resolution of this technique is on the order of tens of nanometers or even smaller. It could be applied for studying the electron transport in a variety of electronic devices ranging from silicon MOSFETs to heterostructure bipolar transistors.

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Section: Resultssupporting

confidence: 84%

New optical gating technique for detection of electric field waveforms with subpicosecond resolution

et al. 2016

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“…The detailed COMSOL simulations of the minimum response time based on the hydrodynamic model are presented in [95] for the 2DEG in InGaAs, Si, GaN, and for the two-dimensional hole gas in pdiamond. The simulation results reported in [95] agree well with analytical theory developed in [93] yielding the characteristic inverse response time 1/ r τ in the frame of the hydrodynamic…”

Section: Physics Of Terafets: Ballistic Transport and Plasmonicssupporting

confidence: 81%

Terahertz Plasmonic Technology

Shur

2021

IEEE Sensors J.

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The terahertz (THz) technology has found applications ranging from astronomical science and earth observation to compact radars, nondestructive testing, chemical analysis, explosive detection, moisture content determination, coating thickness control, film uniformity determination, , structural integrity testing , wireless covert communications, medical applications , (including skin cancer detection), imaging, and concealed weapons detection. Beyond 5G Wi-Fi and Internet of Things (IoT) are the expected killer applications of the THz technology. Plasmonic TeraFETs such as Si CMOS with feature sizes down to 3 nm could enable a dramatic expansion of all these applications. At the FET channel sizes below 100 nm, the physics of the electron transport changes from the collision dominated to the ballistic or quasi-ballistic transport. In the ballistic regime, the electron inertia and the waves of the electron density (plasma waves) determine the high frequency response that extends into the THz range of frequencies. The rectification and instabilities of the plasma waves support a new generation of THz and sub-THz plasmonic devices. The plasmonic electronics technology has a potential become a dominant THz electronics sensing technology when the plasmonic THz sources join the compact, efficient, and fast plasmonic TeraFET THz detectors already demonstrated and being commercialized.

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“…As predicted in [40], the unique features of the near ballistic response could be revealed by studying "ringing" of the transistor response to short terahertz pulses.…”

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confidence: 80%

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

Stolyarov

Liu

Rumyantsev

et al. 2015

Applied Physics Letters

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102

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We have investigated low-frequency 1/f noise in the boron nitride -graphene -boron nitride heterostructure field-effect transistors on Si/SiO 2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ~30000 to ~36000 cm 2 /Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ~510 -9 μm 2 Hz -1 , which is a factor of 5 -10 lower than that in non-encapsulated graphene devices on Si/SiO 2 . The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO 2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

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Ultimate response time of high electron mobility transistors

Abstract: Articles you may be interested inGrowth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Cited by 32 publications

References 26 publications

New optical gating technique for detection of electric field waveforms with subpicosecond resolution

New optical gating technique for detection of electric field waveforms with subpicosecond resolution

Terahertz Plasmonic Technology

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

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