Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

Stolyarov, Maxim A.; Liu, Guanxiong; Rumyantsev, Sergey; Shur, M. S.; Balandin, Alexander A.

doi:10.1063/1.4926872

Cited by 93 publications

(124 citation statements)

References 43 publications

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“…11À14 This is consistent with recently reported results from the BN/graphene/BN transistors, 33 due to the fact that the surface of the h-BN substrate is ultraflat and free of dangling bonds, greatly reducing the numbers of charge traps compared with SiO 2 and leading to a strong decrease of device noise level. 16,19,24,34 Compared with the high mobility in the mechanically transferred exfoliated samples, it should be noted that the mobility in our samples is mainly limited by the graphene defectively instead of graphene/h-BN interface states.…”

Section: Articlesupporting

confidence: 92%

Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

et al. 2015

ACS Nano

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Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 × 10(-9) μm(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices.

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Section: Articlesupporting

confidence: 92%

Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

et al. 2015

ACS Nano

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“…2d). [70] In the case of silicon FET, the functionalization of the sensor channel (in this case a silicon nanowire buried in a SiO 2 dielectric) with 3-aminopropyl-triethoxysilane (APTES) yields better noise performances (up to 60 times), presumably due to the passivation of the oxide traps and interface states at the sensor surface. [71] On the contrary, for carbon nanotubes, a two-level random telegraphic noise (RTN) was reported and ascribed to a single probe molecule (more precisely, the binding and unbinding of charged target biomolecules at its active sites), which was covalently bound to a defect in the carbon nanotube sidewall.…”

Section: Electrical Noise Performances Of Graphene Materialsmentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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“…The d.c. bias is applied across the integrated structure whereas the gate voltage of the G-FET is used to change R L and hence tune the oscillation frequency. Note that both the 1T-TaS 2 and graphene sides of the channel are contacted from the edge, forming quasi-1D contacts 18,23 . The h-BN entirely covers the 1T-TaS 2 and graphene sides of the channel to protect against environmental exposure.…”

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confidence: 99%

A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature

et al. 2016

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The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe, 1T-TaS and 1T-TiSe exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

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Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

Cited by 93 publications

References 43 publications

Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

Sensing at the Surface of Graphene Field‐Effect Transistors

A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature

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