Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

“…First, the SLS is weakened with the decreasing growth rate, which accords with the reducing well width fluctuation due to the reducing growth rate. Second, references [23,25] have demonstrated similar guess about SLS, which can further support our viewpoints. When the QW growth rate is reduced to 0.0088 nm/s, the localization effect is less significant and thus only a single PL peak induced by DLS appears for S15.…”

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

“…The large lattice mismatch between GaN and InN hinders the growth of high-quality interfaces and leads to the formation of a diffusive interface with poor photoluminescence (PL)/electroluminescence (EL) emission and carrier photogeneration efficiency [20,21,22,23]. A diffusive interface is often attributed to the migration of indium and gallium atoms through the spinodal decomposition process resulting in the formation of clusters and localization of charge carriers.…”

Depth profiling the electronic structures at HfO2∕Si interface grown by molecular beam epitaxy

“…Metal oxides such as Y 2 O 3 , TiO 2 , Ta 2 O 5 , Al 2 O 3 , La 2 O 3 , and SrTiO 3 have been attractive candidates and have drawn great research interests. [8][9][10] In this article, an ultrathin HfO 2 layer was grown by molecular beam epitaxy ͑MBE͒. The formation of SiO 2 or metal silicates often occurs during the growth and subsequent thermal procedures.…”