2021
DOI: 10.1364/ol.431175
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Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect

Abstract: We report on the enhancement of responsivity by more than one order of magnitude of a silicon-based sub-terahertz detector when a mesoscopic dielectric particle was used to localize incident radiation to a sub-wavelength volume and focus it directly onto the detector. A strained-silicon modulation field-effect transistor was used as a direct detector on an incident terahertz beam at 0.3 THz. A systematic study in which Teflon cubes were placed in front of the detector to focus the terahertz beam was performed.… Show more

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Cited by 11 publications
(7 citation statements)
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“…The interesting terajet applications include the gain in sensitivity of terahertz detectors by localized downward radiation in a subwavelength volume [60][61][62], gain in sensitivity of open microwave resonators [63], the use of terajet generating mesoscale particles as a dielectric small-sized antenna in promising terahertz communication systems, including 5G-6G [64,65], and others.…”
Section: Terajetsmentioning
confidence: 99%
“…The interesting terajet applications include the gain in sensitivity of terahertz detectors by localized downward radiation in a subwavelength volume [60][61][62], gain in sensitivity of open microwave resonators [63], the use of terajet generating mesoscale particles as a dielectric small-sized antenna in promising terahertz communication systems, including 5G-6G [64,65], and others.…”
Section: Terajetsmentioning
confidence: 99%
“…Main performance and detection bandwidth of terahertz detectors based on different materials. [1][2][3][4][5][6][7][8][9][10][11] is on the nanoscale, which can limit its application. The equivalent noise power is another important metric for detectors, and further improvement of the optical responsivity and reduction of the total noise level can reduce the equivalent noise power, which can be seen in Figure 1.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, the responsivity of PDs in the THz range is improved by: (i) a traditional gate structure with the grating-gate structure [28]; (ii) implementation of a silicon lens [29], diffractive grating [30], or wavelength-scaled dielectric cube [31,32]; and (iii) internal integration of an antenna structure [33,34]. All these methods, except for [31,32], require a change in the internal structure of the THz detector and its design and are intended for special operation in the THz range.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, the responsivity of PDs in the THz range is improved by: (i) a traditional gate structure with the grating-gate structure [28]; (ii) implementation of a silicon lens [29], diffractive grating [30], or wavelength-scaled dielectric cube [31,32]; and (iii) internal integration of an antenna structure [33,34]. All these methods, except for [31,32], require a change in the internal structure of the THz detector and its design and are intended for special operation in the THz range. In our work, we consider the use of an IR detector for operation in a non-standard THz range not intended by the detector manufacturer and show for the first time that without changing its internal design, it is possible to increase its sensitivity not in the IR but in the THz range.…”
Section: Introductionmentioning
confidence: 99%
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