2010
DOI: 10.1117/12.858637
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Results from a novel EUV mask inspection by 193nm DUV system

Abstract: The semiconductor industry recently concluded that EUV lithography is the most promising candidate to replace ArF for the 22nm half-pitch node and beyond. Significant progress was made in EUV scanner and source technology and EUV resists have achieved acceptable performance levels as well. But issues related to EUV mask inspection and defectivity remain for the most part unanswered. This gap positions EUV masks as the leading risk to the entire technology, and requires a robust solution during the introduction… Show more

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Cited by 4 publications
(3 citation statements)
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“…In an earlier report [2] we presented the evaluation results of the Aera2 for EUV masks of the 32nm generation. With new improvements made recently the Aera2 was made suitable for EUV mask inspection.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In an earlier report [2] we presented the evaluation results of the Aera2 for EUV masks of the 32nm generation. With new improvements made recently the Aera2 was made suitable for EUV mask inspection.…”
Section: Resultsmentioning
confidence: 99%
“…In earlier paper we studied the new improved version of Aera2 aerial inspection tool for EUV masks of the 32nm generation [2]. This much improved tool platform contains field-upgradeable optical improvements that are designed to equip the system with a high-resolution reflected optical channel, with enough energy to support the smallest pixel sizes, and an advanced real-time tracking auto-focus system.…”
Section: Introductionmentioning
confidence: 98%
“…For example, a lack of sufficient light-source power, particle-free mask handling, defect-free and flat mask blanks, [1][2][3][4][5] and resist material development 6,7 all need to be addressed. From the viewpoint of EUV mask fabrication, mask pattern defect inspection [8][9][10][11] and repair [12][13][14] are some of the most demanding tasks to be dealt with. The reason is that for EUVL generation, the device pattern feature size happens to be exceedingly small and calls for a higher repairing accuracy than would be required in optical lithography.…”
Section: Introductionmentioning
confidence: 99%