Results of radiation effects on a chalcogenide non-volatile memory array

Maimon, J.; Hunt, K.; Rodgers, J.; Burcin, L.; Knowles, K.

doi:10.1109/aero.2004.1368025

Cited by 9 publications

(4 citation statements)

References 17 publications

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“…The entire chip area of chips 1-6 was uniformly irradiated. Furthermore, in three other MOS-chips (7,8, only a part of the cell array was irradiated by using a beam spot of mm at doses of 3, 10, and 30 Mrad SiO . Based on the size of the cell array of mm , we estimate that 21% of the total array cells were exposed to irradiation, corresponding to 910 K cells.…”

Section: Irradiation Experimentsmentioning

confidence: 99%

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Gasperin

Paccagnella

Schwank

et al. 2008

IEEE Trans. Nucl. Sci.

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We study proton and heavy ion irradiation effects on Phase Change Memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation.Index Terms-Chalcogenide material, GST, heavy ions, non-volatile memories, phase change memories (PCM), radiation effects.

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Section: Irradiation Experimentsmentioning

confidence: 99%

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Gasperin

Paccagnella

Schwank

et al. 2008

IEEE Trans. Nucl. Sci.

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“…Yet, until now few works [5][6][7] have addressed radiation effects on PCM. In [6], the authors investigated both Total Ionizing Dose (TID) effects and Single Event Effects on a 64-kbit PCM array integrated with radiation-hardened CMOS technology.…”

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confidence: 98%

Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

Gasperin

Wrachien

Cester

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the WordLine selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.

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“…Radiation effects on phase-change memories have been addressed by a few experimental studies (2,3,5,(8)(9)(10)(11). A phasechange memory-cell array with a conventional 225GST film used as a storage medium has been fabricated by a standard complementary metal-oxide-semiconductor (CMOS) process (12).…”

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confidence: 99%

Origin of radiation tolerance in amorphous Ge ₂ Sb ₂ Te ₅ phase-change random-access memory material

Konstantinou

Lee

Mocanu

et al. 2018

Proc. Natl. Acad. Sci. U.S.A.

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The radiation hardness of amorphous GeSbTe phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionizing radiation events have been modeled to investigate their effect on the atomic and electronic structure of the glass. Investigation of the short- and medium-range order highlights a structural recovery of the amorphous network after exposure to the high-energy events modeled in this study. Analysis of the modeled glasses reveals specific structural rearrangements in the local atomic geometry of the glass, as well as an increase in the formation of large shortest-path rings. The electronic structure of the modeled system is not significantly affected by the ionizing radiation events, since negligible differences have been observed before and after irradiation. These results provide a detailed insight into the atomistic structure of amorphous GeSbTe after irradiation and demonstrate the radiation hardness of the glass matrix.

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Results of radiation effects on a chalcogenide non-volatile memory array

Cited by 9 publications

References 17 publications

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

Origin of radiation tolerance in amorphous Ge ₂ Sb ₂ Te ₅ phase-change random-access memory material

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Results of radiation effects on a chalcogenide non-volatile memory array

Cited by 9 publications

References 17 publications

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

Origin of radiation tolerance in amorphous Ge 2 Sb 2 Te 5 phase-change random-access memory material

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Origin of radiation tolerance in amorphous Ge ₂ Sb ₂ Te ₅ phase-change random-access memory material