Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Benoit, M.; Mendizabal, J. Bilbao De; Casse, G.; Chen, H.; Chen, K.; Bello, F. A. Di; Ferrère, D.; Golling, T.; González-Sevilla, S.; Iacobucci, G.; Lanni, F.; Liu, H.; Meloni, F.; Meng, L.; Miucci, A.; Muenstermann, D.; Nessi, M.; Perić, I.; Rimoldi, M.; Ristić, B.; Pinto, M. Vicente Barrero; Vossebeld, J. H.; Weber, M.; Wu, W.; Li, Xu

doi:10.1088/1748-0221/11/07/p07019

Cited by 10 publications

(20 citation statements)

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“…The telescope allowed the testing of various detectors, ranging from small and full size FE-I4 based sensors [12,13] to strip modules and pad detectors [14] read out by fully independent DAQ systems that were synchronised to the telescope by means of two trigger schemes. In the case of very small devices the Region Of Interest trigger speeded up data taking by a factor of 35 compared to triggering on the full telescope acceptance.…”

Section: Discussionmentioning

confidence: 99%

The FE-I4 telescope for particle tracking in testbeam experiments

et al. 2016

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A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 × 50 µm 2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV π + ) a resolution of better than 8 × 12 µm 2 at the position of the device under test was achieved. The telescope reached a trigger rate of 6 kHz with two measured devices. It is mainly designed for studies using FE-I4 based prototypes, but has also been successfully run with independent DAQ systems. Specialised trigger schemes ensure data synchronisation between these external devices and the telescope. A region-of-interest trigger can be formed by setting masks on the first and the last pixel sensor planes. The setup infrastructure provides centrally controlled and monitored high and low voltage power supplies, silicon oil cooling, temperature and humidity sensors and movable stages.

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Section: Discussionmentioning

confidence: 99%

The FE-I4 telescope for particle tracking in testbeam experiments

et al. 2016

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“…The proton irradiated sensors are directly glued and wirebonded to a printed-circuit-board (PCB). The neutron irradiated sensors are glued and wire-bonded to a ceramic carrier, which is connected to the same PCB type via a socket 3 . The PCB provides stable and ripple-free power, filters the high voltage and converts the differential slow control signals to single ended signals required by the MuPix7.…”

Section: Setupmentioning

confidence: 99%

“…For another sensor with a similar pixel cell design and hybrid readout (CCPDv4 [3]), it was shown that the analogue pixel performance remains high after particle fluences of up to 5.0 × 10 15 1 MeV n eq /cm 2 [4]. Additional studies with prototypes of Depleted Monolithic Active Pixel Sensor (DMAPS) based on a modified 180 nm CMOS process from TowerJazz [5] have also shown high efficiencies after irradition with up to 1 × 10 15 n eq /cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Augustin

Berger

Dittmeier

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 10 15 n eq /cm 2 ) and 24 GeV protons (up to 7.8 × 10 15 protons/cm 2 ) and compare the performance with non-irradiated sensors. At sensor temperatures of about 8 • C efficiencies of ≥90 % at noise rates below 40 Hz per pixel are measured for fluences of up to 1.5 × 10 15 n eq /cm 2 . A time resolution better than 22 ns, expressed as Gaussian σ, is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional. 2 I.e. signal amplification, digitization, zero supression, time stamp sampling, readout state-machine and data serialization is implemented on chip.

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“…The AMS180v4 sensor has four kinds of pixel, and only the baseline one, STime pixel, was measured. The per-pixel analogue electronic of AMS180v4 comprises charge sensitive amplifiers, source followers and a discriminator stage which can be controlled by two voltage levels (global threshold from external and local threshold generated by the local DAC) [19]. The tuning procedure controls the 4-bit local DAC (named TDAC -Threshold DAC) connected to the discriminator of each pixel of the AMS180v4 sensor to compensate the possible local mismatches in the electronics between different pixels.…”

Section: Sensor Tuningmentioning

confidence: 99%

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

et al. 2017

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High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in the testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. Further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.

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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Cited by 10 publications

References 10 publications

The FE-I4 telescope for particle tracking in testbeam experiments

The FE-I4 telescope for particle tracking in testbeam experiments

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

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