Results on n-type IBC solar cells using industrial optimized techniques in the fabrication processing

The selection of key technologies by the silicon photovoltaic industry based on the Delphi method and AHP (analytic hierarchy process): Case study of China

“…PERC solar cells have an advantage over the full Al back surface field (BSF), with PECVD SiNx stack controlling charges on the surface. [35] IBC cells (fabrication of electrodes and isolation of p-n area) Interdigitated back contact (IBC) solar cells have an advantage of high efficiency and reduced complexity of cell interconnection [36]. The product of Sunpower using a wafer, 155.1 cm 2 n-type CZ, had achieved high conversion efficiency of up to 24.2% [37].…”

Purcell effect and luminescent downshifting in silicon nanocrystals coated back-contact solar cells

“…To exploit LDS stemming from Si-NCs implemented directly on solar cells, we fabricated interdigitated back contact solar cells on 25 Ωdcm n-type doped float-zone silicon wafers with bulk minority carrier lifetime higher than 5 ms coated with Si-NCs in an industrial process [22]. The wafer thickness (160 μm) guarantees a high collection efficiency of the minority carriers.…”

“…In order to overcome this drawback, we integrated the annealing within the IBC cell process steps. Particular care was taken in order to depart as little as possible from the standard industrial process used to produce the IBC cells [22]. For that matter the SiO 2 /SRO double-stack layer was deposited at the stage when in the standard process the passivation layer was deposited on the front side, while the annealing step used to drive in the dopants was adapted to be also used to induce the Si-NCs in the SRO.…”

“…In this paper, an innovative method is presented to fabricate interdigitated back contact silicon crystalline solar cells in an industrial pilot line [22] coated by an optimized Si-NCs layer in a cost effective way [23]. An improvement in the power energy conversion efficiency of 0.8% was measured.…”

Emitter Patterning for Back-Contacted Si Heterojunction Solar Cells Using Laser Written Mask Layers for Etching and Self-Aligned Passivation (LEAP)

“…For comparison, in emitter patterning technologies for diffused junction cells, patterned dielectric mask layers are employed for self-aligning during a subsequent full area deposition step. The RISE [17] and the ZEBRA [18] cell concepts make use of laser-patterned dielectric mask layers in such a way. Self-aligned processes reduce the number of steps required for forming the patterned structure and eliminate an alignment step, thereby reducing the process complexity and improving reliability.…”