Reticle error correction for lithography tool qualification benefits and limitations

Kiers, Ton; Mulder, Melchior; Schoot, Jan B.P. van; Waelpoel, Jacques; Uitz, Robert

doi:10.1117/12.410696

Cited by 4 publications

(3 citation statements)

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“…This results in different uniformity trend for vertical and horizontal patterns, due to misalignment of a rotating polygon mirror of the laser writer. Because this error is present on the same column, it is called "column effect or striping effect" [6].…”

Section: Column Effectmentioning

confidence: 99%

Extended capability of laser writer for masks beyond 180-nm nodes

Cho

Lee

Kim

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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The demands for shrinking critical dimension (CD) and for tight control of CD uniformity on photomask are rapidly increasing. To keep pace with the demands, optical pattern generators using i-line resist is expanding its capability by continuously modifying hardware and writing strategies. Aside from their advantage of high throughput and layer-to-layer alignability for phase-shifting masks (PSM), this optical process has proven to show a good capability in view of the mean-to-target (MTT) control.In this paper, we investigate the extended capability of a laser writing tool for l8Onm node and below in view of process-induced limitations and systematic errors. We also discuss the effects of pattern density and of writing strategy on CD accuracy and pattern placement error. Since MTT and CD uniformity error for 1 80 nm generation device are critical for wafer printing, we scrutinize process-induced limitations and systematic errors. The process-induced limitations, related to pattern density and shape, are discussed along with the football effect and iso-dense bias.

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Section: Column Effectmentioning

confidence: 99%

Extended capability of laser writer for masks beyond 180-nm nodes

Cho

Lee

Kim

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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“…At ASML. the mask user can compensate for ARLV in two different ways: by means of a Picked CD' design 1 j and by means of "Reticic Error Correction' (REC) 21. Picked CD is a method that allows the user to pick' those lines that arc closest to the desired line width.…”

Section: Introductionmentioning

confidence: 99%

Reticle processing induced proximity effects

2002

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Minirnising Across Reticle Line width Variation is a continuous challenge for each resolution node. Having tight critical dimension (CD) uniformity for a large variety of pitches is even more challenging. The causes of the reticle errors originate mainly from writing reticles at the edge of the write-tool's capabilities. and from manufacturing at the edge of etching and processing capabilities. These various reticle errors will subsequently lead to non-uniformity effects on wafer level. The rcticle errors can be compensated for using technologies similar to those used to correct for optical proximity effects at wafer level. The errors can be small effects in the nanometer range like write noise or larger effects of I 0 nm to I 00 nm on reticle level from etching. Many effects that we see on reticle will be made visible on the wafer after exposure on a Step & Scan system. To visualise system performance one can use specific techniques such as selection of lines that are on target. In addition, with extensive measurement these reticle errors can be subtracted and thus removed from the final wafer result.For the investigation use is made of a reticle which has a variation of 35 pitches for four line widths of 100 nm. 1 30 nrn 150 nm and 170 am at IX. The reticle underwent extensive measurements and its characteristics are described from these measurements. In addition. some wafer results are shown.

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“…The effect can be shown with a mathematical method named Reticle Error Correction (REC)[5]. This implies subtracting the reticle errors from wafer SEM measurements after exposure.…”

mentioning

confidence: 99%

<title>Contact hole litho correlation with shape analysis</title>

Janssen

Elbattay

Kohler

2003

19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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For the near future generations of lithography we investigate the reticle measurements of contact holes with respect to their lithographic performance. The difficulty with the shrinking size of contact holes is that their X and/or Y measurement on reticle does not correlate with the lithographic results. The shape of the contact hole will have a large impact. This paper considers the several types of reticle SEM measurement on isolated contact holes, the simulations on asymmetric contact holes, reticle photo analysis of contact hole shape, and lithographic result of 1 15-nm contact holes.A set of contact holes has been measured with a CD SEM in several ways as x-size, y-size, area, diameter in various angles. Only area measurement will suffice to judge contact hole size and shape. A second step simulates the behaviour of asymmetric contact hole shapes. For attenuated phase shifted contact holes of 1 3Onm (lx) and smaller, shape asymmetry can lead to small CD deviations. The third step correlates lithographic performance with the reticle measurements. Contact hole area or effective circular diameter correlates with wafer results. A better correlation results from reticle CD uniformity profile. The attenuated (6%) PSM that we used, has a large variety of sizes and pitches in contact holes. The reticle was exposed using the ASML Step and Scan PAS5SOO/1100 system. The reticle was measured with a KLA SEM.

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Reticle error correction for lithography tool qualification benefits and limitations

Cited by 4 publications

References 0 publications

Extended capability of laser writer for masks beyond 180-nm nodes

Extended capability of laser writer for masks beyond 180-nm nodes

Reticle processing induced proximity effects

<title>Contact hole litho correlation with shape analysis</title>

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