In order to remove band-pass filters while maintaining narrow-band photodetection, three feasible approaches have been proposed. The first is the synthesis of narrow-band absorption of photoactive materials such as organic molecular materials with highly selective absorption characteristics. [7,8] Another one is the design of optic microcavity to intentionally enhance light absorption at a particular wavelength. [9,10] The third is the construction of thick films or bulk single crystals to tailor surface-charge recombination. Here, only long-wavelength light could generate photoexcited charges due to high light penetration length, whereas the shortwavelength photogenerated charges are lost as heat through charge recombination during the travel to the electrodes. [11,12] Lead halide perovskites are currently under intensive investigation owning to the exceptional optoelectronic properties that make them suitable for important applications in solar cells, light-emitting diodes, and photodetectors. [13][14][15][16][17][18][19][20][21] In particular, it has been shown that the photodetectors based on halide perovskite films with thicknesses larger than 10 µm can generate a significant narrow-band photoresponse with tunable spectralThe positive bias in theory narrows down the depletion region and thus results in significant charge injection, which should be detrimental to charge generation and collection performance for traditional photodetectors. Here, instead, it is found that the external quantum efficiency (EQE) is increased by more than 50 times when the photodetector is positively biased. A positive bias of +6 V drives ion migration of Br − and Cs + towards the anode and cathode, respectively, leading to self-doping within bulk single crystals to form an advantageous p-i-n junction for better charge collection in the devices. Meanwhile, the injected holes are allowed to tunnel through the cesium lead bromide/fullerene interface to reach the cathode which also significantly contributes to the enhancement of EQE in the forward-biased devices. The positively-biased narrow-band (full width at half maxima (FWHM) = 16 nm) photodetectors exhibit a specific detectivity of 6.5 × 10 10 Jones at 550 nm, along with the −3 dB cutoff frequency of 2776 Hz. By manipulating charge injection and ion migration using interfacial engineering, a class of non-traditional, positively-biased, and highly narrow-band photodetectors is demonstrated, which offers an alternative design strategy for imaging, biosensing, automatic control, and optical communication.