However bi-stability of ferroelectric switching inhibits the stability of multistate polarization states. [4] This mainly arises due to explicit single switching event of 180° ferroelectric switching such as up to down polarization or vice versa under the applied external voltage. The deterministic polarization states can be achieved by controlling the speed of ferroelectric domain growth during reversal via limiting the displacement current resulting in multilevel polarization states, and also by creating the spectrum of switched states by polarization rotation through nanodomain engineering. [4,5] Recently, [111] PbZr 0.2 Ti 0.8 O 3 (PZT) thin film exhibited multistep polarization reversal via multistep 90° ferroelastic switching. [6] Further, it is found that multistep polarization switching is kinetic controlled, where low field results in multistep 90° ferroelastic switching due to higher elastic energy. While high field results in bipolar like direct 90° ferroelastic switching due to higher electrostatic energy. [2] In case of crystal direction controlled multistep polarization reversal, the investigation has been limited to three crystal directions [001], [110] and [111] PZT films. [6] Other miscut crystal directions away from this low index [hkl] needs to be Deterministic creation of multiple ferroelectric states with variant values of polarization in ferroelectric thin films is promising for multilevel data storage applications. However, the intrinsic bi-stability of ferroelectric switching makes it challenging to achieve. The deterministic ferroelectric states can be achieved by multistep switching through various means such as controlling domain structure and switching by inducing local disorder, and also by crystal orientations. However, to determine the effect of crystal directions on the stability of multistep polarization reversal requires investigation on different crystal directions. A high-throughput approach namely combinatorial substrate epitaxy (CSE) is utilized to fabricate La 0.7 Sr 0.3 MnO 3 (LSMO) polycrystalline substrate to grow PbZr 0.2 Ti 0.8 O 3 (PZT) films epitaxially with different crystal directions in a single sample. The polarization reversal area is determined as a function of applied voltage along different . From the analysis, it is found that all exhibit multilevel polarization states due to multistep switching events. Further the degree of multilevel polarization states shows a sawtooth-like oscillatory behavior with increase in [111] miscut angle, which is attributed to influence of local disorder on the domain structure. Therefore, the realization of multilevel data storage device based on deterministic polarization reversal can be achieved with appropriate crystal directed thin films.