2021
DOI: 10.1002/adma.202005893
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Revealing Structural Disorder in Hydrogenated Amorphous Silicon for a Low‐Loss Photonic Platform at Visible Frequencies

Abstract: The high refractive index of hydrogenated amorphous silicon (a‐Si:H) at optical frequencies is an essential property for the efficient modulation of the phase and amplitude of light. However, substantial optical loss represented by its high extinction coefficient prevents it from being utilized widely. Here, the bonding configurations of a‐Si:H are investigated, in order to manipulate the extinction coefficient and produce a material that is competitive with conventional transparent materials, such as titanium… Show more

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Cited by 84 publications
(76 citation statements)
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“…Furthermore, in order to minimize the absorption of Si in the high frequency visible regime and to increase device efficiency (i.e., to improve the color generation and high hologram efficiency), hydrogenated amorphous silicon (a-Si:H) is deposited using plasma-enhanced chemical vapor deposition at an optimized pressure and temperature, 25 mTorr and 200 °C, respectively (Supplementary Note 4 and Supplementary Fig. 4 ) 48 .The used a-Si:H is denoted as Si(P25) and exhibits much lower extinction coefficient at the wavelength of 532 nm with enough refractive index compared to conventional a-Si, resulting in improved device efficiency (Fig. 2b —Left).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, in order to minimize the absorption of Si in the high frequency visible regime and to increase device efficiency (i.e., to improve the color generation and high hologram efficiency), hydrogenated amorphous silicon (a-Si:H) is deposited using plasma-enhanced chemical vapor deposition at an optimized pressure and temperature, 25 mTorr and 200 °C, respectively (Supplementary Note 4 and Supplementary Fig. 4 ) 48 .The used a-Si:H is denoted as Si(P25) and exhibits much lower extinction coefficient at the wavelength of 532 nm with enough refractive index compared to conventional a-Si, resulting in improved device efficiency (Fig. 2b —Left).…”
Section: Resultsmentioning
confidence: 99%
“…The emitter is a 50 μm‐thick PDMS layer, that is known to have selective emissivity in the AW as a consequence of optical phonon resonance. [ 43 ] The multilayer of a‐Si:H and SiO 2 are fabricated using plasma‐enhanced chemical vapor deposition (PECVD), [ 44 ] followed by spin‐coating of the PDMS (see Section 4). Scanning electron microscopy images show that all six layers are deposited well (Figure 1e).…”
Section: Resultsmentioning
confidence: 99%
“…Different geometries of meta‐atoms can be researched in innovative ways to produce multiplexed holography and dual‐mode metasurfaces. With the superior functionalities compared to conventional devices, metasurface holography will continue to mature and be able to produce real‐life applications 132–136 such as virtual/augmented reality devices, data storage, and security.…”
Section: Discussionmentioning
confidence: 99%