2017
DOI: 10.1016/j.commatsci.2017.05.048
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Revealing the deformation mechanisms of 6H-silicon carbide under nano-cutting

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Cited by 56 publications
(30 citation statements)
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“…Despite substantial efforts, elastic‐plastic deformation and transition behaviors of 3C‐SiC at the nanoscale are not properly understood. Recently, deformation mechanisms at nano‐scales of other polytypes which includes amorphous, 4H and 6H–SiC have been studied . Besides, this study will also help in designing of nanoscale piezo electric, resistive and biomedical devices and sensors.…”
Section: Introductionmentioning
confidence: 97%
“…Despite substantial efforts, elastic‐plastic deformation and transition behaviors of 3C‐SiC at the nanoscale are not properly understood. Recently, deformation mechanisms at nano‐scales of other polytypes which includes amorphous, 4H and 6H–SiC have been studied . Besides, this study will also help in designing of nanoscale piezo electric, resistive and biomedical devices and sensors.…”
Section: Introductionmentioning
confidence: 97%
“…Wu et al studied the nanometric cutting deformation mechanism of 6H-SiC by MD simulation. It was believed that with the increase of cutting depth, 6H-SiC experienced the transition from elastic deformation to plastic deformation and then to intermittent cleavage (Wu et al, 2017). Xiao et al studied the relationship between cutting thickness and stress through MD simulation and concluded that when the cutting depth became small enough, the tensile stress would become lower than the critical tensile stress of brittle fracture, which was not enough to cause brittle fracture (Xiao et al, 2018).…”
Section: Introductionmentioning
confidence: 99%
“…The Tersoff potential [12] was adopted to describe the interatomic interactions in the SiC workpiece and the diamond cutting tool. The Morse potential [9] was adopted to describe the interatomic interaction between the SiC workpiece and the diamond cutting tool. Simulation results were visualized with Open Visualization Tool (OVITO) [13].…”
Section: Models and Methodsmentioning
confidence: 99%
“…They found that 4H-SiC shows the minimum subsurface lattice damage depth in contrast to 6H-SiC. Wu et al [9] revealed the deformation mechanisms of 6H-SiC through nanocutting MD simulations. They found that the plastic deformation of 6H-SiC can be realized by phase transformation and dislocations.…”
Section: Introductionmentioning
confidence: 99%