2019
DOI: 10.1002/advs.201802286
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Revelation of Inherently High Mobility Enables Mg3Sb2 as a Sustainable Alternative to n‐Bi2Te3 Thermoelectrics

Abstract: Over the past years, thermoelectric Mg 3 Sb 2 alloys particularly in n‐type conduction, have attracted increasing attentions for thermoelectric applications, due to the multivalley conduction band, abundance of constituents, and less toxicity. However, the high vapor pressure, causticity of Mg, and the high melting point of Mg 3 Sb 2 tend to cause the inclusion in the materials of boundary phases and defects that affect… Show more

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Cited by 81 publications
(54 citation statements)
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“…n‐Type Mg 3 Sb 2 –Mg 3 Bi 2 alloys are one of the most potent thermoelectric materials for low‐ (near room temperature) to mid‐temperature range [ 1–9 ] because of their highly degenerate conduction band structure [ 1,4 ] and extremely low phonon thermal conductivity. [ 10–11 ] Since the discovery of n‐type Mg 3 Sb 1.5 Bi 0.5 with zT of 1.6 at 700 K in 2016, [ 1 ] extensive research have been conducted to improve their thermoelectric performance via the engineering of the electronic band structure, [ 5,12 ] chemical doping, [ 13–16 ] bonding [ 17–19 ] and modulation of microstructure.…”
Section: Figurementioning
confidence: 99%
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“…n‐Type Mg 3 Sb 2 –Mg 3 Bi 2 alloys are one of the most potent thermoelectric materials for low‐ (near room temperature) to mid‐temperature range [ 1–9 ] because of their highly degenerate conduction band structure [ 1,4 ] and extremely low phonon thermal conductivity. [ 10–11 ] Since the discovery of n‐type Mg 3 Sb 1.5 Bi 0.5 with zT of 1.6 at 700 K in 2016, [ 1 ] extensive research have been conducted to improve their thermoelectric performance via the engineering of the electronic band structure, [ 5,12 ] chemical doping, [ 13–16 ] bonding [ 17–19 ] and modulation of microstructure.…”
Section: Figurementioning
confidence: 99%
“…[ 20 ] Presumably because all previous (polycrystalline) samples still show some increasing trend of electrical conductivity with temperature below room temperature, many recent reports still claim the predominance of ionized impurity scattering at low temperature. [ 3,6,23–25,31–35 ]…”
Section: Figurementioning
confidence: 99%
See 1 more Smart Citation
“…Aiming at improving the μ and σ near RT by suppressing the grain boundary resistance, one direct way is to simply reduce the number of grain boundaries to get coarse-grained polycrystalline samples, which can be achieved by either increasing the sintering temperature [ 78 , 82 ] or post-annealing under Mg atmosphere if initial grain sizes are small [ 82 ]. Furthermore, melting followed by a sintering process has recently been reported as an effective way to prepare samples with large grain sizes [ 73 , 92 , 177 ]. Some experimental results also indicate that Mg 3 Sb 2- x Bi x samples with high Bi content can have large grain sizes under the same preparing condition [ 47 ], which is probably due to their low melting points.…”
Section: Optimization Of Te Propertiesmentioning
confidence: 99%
“…For example, the room-temperature electrical conductivity is ~4 × 10 4 S m −1 for the sample with an average grain size of ~7.8 μ m, and it is ~1 × 10 4 S m −1 for the sample with an average grain size of ~1.0 μ m [ 53 ]. Similarly, the grain size of Mg 3 Sb 2- x Bi x alloys was increased by annealing [ 54 ] or hot deforming [ 27 , 34 , 55 ], and improvement in mobility was also observed. It should be noted that the defects would be also reduced, in addition to the increasing grain size, by increasing the sintering temperature or by annealing.…”
Section: Manipulating the Carrier-scattering Mechanismmentioning
confidence: 99%