Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

Fretwurst, E.; Feick, H.; Gläser, M.; Gößling, C.; Heijne, E.H.M.; Hess, A.L.; Lemeilleur, F.; Lindström, G.; Mahlmann, K.H.; Rolf, Arno; Schulz, T.; Soave, C.

doi:10.1016/0168-9002(94)91417-6

Cited by 93 publications

(12 citation statements)

References 6 publications

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“…The detectors were heated to 60 and 80qC in order to emulate moderate-and long-term annealing processes [10]. Full-depletion voltage as a function of equivalent time periods at room temperature (20qC) from one day up to ~ six years is shown in Fig.…”

Section: Annealingmentioning

confidence: 99%

Studies of radiation hardness of oxygen enriched silicon detectors

Ruzin

Casse

Gläser

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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Detectors of high-energy particles sustain substantial structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long 'lifetime' detectors are required. This work reports about radiation hardness of silicon P-I-N devices fabricated from oxygen-enriched, high-resistivity material. The high and nearly uniform concentration of oxygen in float-zone silicon has been achieved by diffusion of oxygen from SiO 2 layers.

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Section: Annealingmentioning

confidence: 99%

Studies of radiation hardness of oxygen enriched silicon detectors

Ruzin

Casse

Gläser

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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“…At higher fluence it increases proportionally to the fluence [5], [7]. The change of the effective doping concentration shows a complex annealing behavior with exponential dependence on the sensor's temperature [8], [9]. The change of material parameters with irradiation can be influenced by adding impurities to the silicon starting material [10].…”

Section: Introductionmentioning

confidence: 99%

Position dependence of charge collection in prototype sensors for the CMS pixel detector

Bortoletto¹,

Chiochia²,

Cremaldi³

et al. 2004

IEEE Trans. Nucl. Sci.

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Abstract-This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence 1 of 1 10 15 n eq cm 2 at the CERN PS. Afterward, they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a nonzero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

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“…5 allows us to propose an explanation for this observed behavior. It is known from particle detector irradiation studies [16] that the conduction-type inversion point in silicon is sensitive to the initial resistivity and thus to the initial effective impurity concentration of the silicon material. 1-MeV neutron equivalent fluences of about 3-6 cm had been shown to be responsible for the type-inversion of silicon detectors with initial Fig.…”

Section: Study Of the Forward Bias Radiation Responsementioning

confidence: 99%

BPW34 commercial p-i-n diodes for high-level 1-MeV neutron equivalent fluence monitoring

Ravotti¹,

Glaser²,

Moll³

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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Abstract-The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (8 eq ) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for 8 eq 2 10 12 cm 2 has been observed. With increasing particle fluences the forward I-V characteristics of the diode shifts towards higher voltages. At 8 eq 3 10 13 cm 2 , the forward characteristic starts to bend back assuming a thyristorlike behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

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Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

Cited by 93 publications

References 6 publications

Studies of radiation hardness of oxygen enriched silicon detectors

Studies of radiation hardness of oxygen enriched silicon detectors

Position dependence of charge collection in prototype sensors for the CMS pixel detector

BPW34 commercial p-i-n diodes for high-level 1-MeV neutron equivalent fluence monitoring

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