Reverse bias capacitance–voltage characteristics of Al/polyaniline/p-Si/Al structure as a function of temperature

On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range

“…However, there is an inverse response of the capacitance to temperature near 0.5 volt. In other words, the capacitance values exhibited a shift that would tend to decrease with increasing of temperature, and this implies reordering of the interface states around the midgap and variations in R s which depends on capacitance with temperature for Ni/GO-Fe 3 O 4 /n-Si heterojunction [40][41][42][43][44]. One of the reasons for decreasing the capacitance with increasing temperature may be the reduction of the dielectric constant of the interfacial layer with increasing temperature and the redistribution of the interface states due to temperature variations around 0.5 V.…”