Reverse conduction properties of vertical SiC trench JFETs

Sheridan, David C.; Chatty, K.; Bondarenko, V. D.; Casady, Jeff B.

doi:10.1109/ispsd.2012.6229102

Cited by 21 publications

(18 citation statements)

References 2 publications

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“…Because of fast transitions and low turn-on energy, very low impedance package and gate driver are recommended to prevent WBD from faulty turn-on and destructive overvoltage [9]. Some WBD as GaN HEMT [4], [8] and vertical SiC trench JFET [7] do not have a parasitic body diode between drain and source. The current can even flow between drain and source in any directions through their channel.…”

Section: A Diode-less Wide Bandgap Devicesmentioning

confidence: 99%

“…Synchronous converters based on diode-less WBD can properly operate without any additional antiparallel diodes [3]- [4], [7]- [8]. In that way cost and size are reduced but also switching loss.…”

Section: B Diode-less Inverter Leg Operationsmentioning

confidence: 99%

“…Although WBD can be used into converters in place of silicon transistors, they are structurally different. Indeed GaN HEMTs and some SiC JFETs do not have a parasitic body diode [3]- [4], [7] generating extra losses during dead-time into an inverter leg structure. To take full advantage of their outstanding performances the gate driver and the dead-time have to be carefully adapted [4], [8]- [9].…”

Section: Introductionmentioning

confidence: 99%

“…Schematic of an half-bridge topology with a single 2-channel isolator and a high-quadrant are depending on the gate voltage[4],[7]-…”

mentioning

confidence: 99%

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Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters

Grezaud

Ayel

Rouger

et al. 2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Power converters based on Wide Bandgap Devices (WBD) are able to operate at high-frequency and high-voltage. In such synchronous converters a very short dead-time is advised because a lot of WBD do no have a parasitic body diode to conduct current in reverse. Into a high-voltage inverter, isolators generate isolated floating gate signals from logic level input signals. Mismatch between high-side and low-side signal propagation delays involves setting a long secure dead-time. To overcome this matching issue in order to guarantee the dead-time duration and time location, we propose other input signal propagation paths. Both input signals pass through a single lowside 2-channel digital isolator and one isolated signal is translated to the high-side gate driver by a high-speed monolithically integrated level-shifter. The proposed voltage level translator structure has been implemented with a high-voltage diode-less SiC vertical JFET and low voltage MOSFETs. At 240V power supply voltage and 100 kHz switching frequency, the level-shifter propagation delay is only 10 ns with a 1.85 mA supply current. Moreover an effective built-in current regulator prevents the circuit from any current spikes, overvoltage and overconsumption. Such topology allows to safely set a very short 23 ns dead-time and improves WBD-based converter operations while reducing size and price.

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Section: A Diode-less Wide Bandgap Devicesmentioning

confidence: 99%

Section: B Diode-less Inverter Leg Operationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Schematic of an half-bridge topology with a single 2-channel isolator and a high-quadrant are depending on the gate voltage[4],[7]-…”

mentioning

confidence: 99%

See 2 more Smart Citations

Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters

Grezaud

Ayel

Rouger

et al. 2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

View full text Add to dashboard Cite

show abstract

“…1), in the same way as an Si IGBT. The point is that unipolar transistors, JFETs and MOSFETs alike, display an ability to conduct negative currents through the channel [13]. This feature may be utilized in a synchronous rectification discussed in [14], or design of diode-less converters presented in [15] and then in [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Rąbkowski¹,

Płatek²

2016

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse conducting transistor, which results in different distribution of power losses among the devices. Thus, equations describing the conduction power losses of the transistor and diode are improved and verified by means of circuit simulations in Saber. Moreover, a comparison of power losses calculated with the use of standard and new equations is also shown. Total power losses in three SiC MOSFET modules of a 50 kVA converter operating at 20 kHz are up to 30% lower when reverse conduction is taken into account. This shows the importance of the discussed problem and proves that much better accuracy in the estimation of power losses and junction temperatures of SiC devices may be obtained with the proposed approach.

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High temperature operation of a monolithic bidirectional diamond switch

Masante

Pernot

Maréchal

et al. 2021

Diamond and Related Materials

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We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.

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Reverse conduction properties of vertical SiC trench JFETs

Cited by 21 publications

References 2 publications

Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters

Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

High temperature operation of a monolithic bidirectional diamond switch

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