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The fast switching speeds, large current handling capability and superior thermal properties of SiC makes SiC Vertical Trench JFETs (VJFETs) ideal candidates for power electronic applications. This paper reports on the recent progress in the development of a low resistance 1200V/25mOhm EM VJFET and a new range of DM JFETs with ratings from 650V to 1700V, and resistances below 22mOhms. The lowest rated voltage class of VJFET, the 650V/55mOhm DM VJFET designed for use in 600-800V applications, has a breakdown voltage of 900V and RDSON,SP of 1.46mOhm-cm2. This RDSON,SP is the lowest reported value for a VJFET and is an order of magnitude lower compared to the best Si Super Junction (SJ) MOSFETs reported in the literature.

The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It is shown that both devices are fully capable of high-temperature operation and that each type has its own unique advantages. For applications operating in extreme high-temperature environments, the larger saturation current (~2.5x) and lower on-state resistance (~150 mΩ at 250 °C) of the depletion-mode SiC vtJFET provide very attractive performance at temperatures beyond silicon's fundamental limitations. In addition, operating the normally-on vtJFET at VGS less than 2 V reduces the gate drive's current requirements to a negligible level, which is an important design factor for high-temperature power modules that use multiple die in parallel.

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