Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Jiang, Xin; Li, Chen-Hao; Yang, Shuo-Xiong; Liang, Jiahao; Lai, Longkun; Dong, Qing-Yang; Huang, Wei; Liu, Xinyu; Luo, Wenguang

doi:10.1088/1674-1056/ac8735

Cited by 2 publications

(1 citation statement)

References 33 publications

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“…[1][2][3] Notably, the advantageous tolerance of GaN-based devices to radiation damage has drawn special attention for their potential application in the aerospace sector. [4][5][6] Additionally, GaN-based devices are utilized in the aerospace industry due to their superior radiation damage resistance in a radiation environment. [7,8] In previous studies, most radiation effect research on GaNbased devices focused on performance degradation from the device's perspective.…”

Section: Introductionmentioning

confidence: 99%

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

et al. 2023

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The effects of ionizing and displacement irradiation of high-energy X-ray and 2 MeV proton on GaN thin films were investigated and compared in this study. The electrical properties of both P-GaN and N-GaN, separated from power devices, were gauged for fundamental analysis. It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose X-ray irradiation, as indicated by the Hall and circular transmission line model. Specifically, under a 100 Mrad(Si) X-ray dose, the specific contact resistance ρc of P-GaN decreased by 30%, and the hole carrier concentration increased significantly. Additionally, the atom displacement damage effect of a 2 MeV proton of 1×1013 p/cm2 led to a significant degradation of the electrical properties of P-GaN, while those of N-GaN remained unchanged. P-GaN was found to be more sensitive to irradiation than N-GaN thin film. The effectiveness of X-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

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Section: Introductionmentioning

confidence: 99%

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

et al. 2023

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Phonon-assisted leakage current of InGaN light emitting diode

Grinys,

Razas,

Podlipskas

et al. 2024

Phys. Scr.

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We report on the leakage current mechanism in a blue GaN-based light-emitting diode (LED). The device structure was grown by the MOCVD technique on a sapphire substrate. The LED was characterized through various measurements including current-voltage, electroluminescence, and secondary ion mass spectroscopy (SIMS). Capacitance-voltage measurements were employed to calculate the depletion layer thickness at different bias voltages and analyze the doping profile in the active layer. The reverse temperature-dependent current-voltage measurements were carried out to study the leakage mechanism. The leakage current was explained by phonon-assisted tunneling of charge carriers through deep trap states. The trap energy and density of states were extracted from the application of the introduced model. Cathodoluminescence measurements were performed to evaluate the density of dislocations, which were then compared to X-ray diffraction measurements. The determined value was close to the density of states obtained from the tunneling model.

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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Cited by 2 publications

References 33 publications

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

Phonon-assisted leakage current of InGaN light emitting diode

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