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Background Our aim was to explore the clinical benefit of intraoperative ultrasound in decompressive craniectomy (DC) for traumatic brain injury (TBI). Methods From January 1, 2018, through April 30, 2021, 54 patients who developed acute subdural hematoma (SDH) due to blunt injury and underwent DC with or without intraoperative ultrasound assistance were retrospectively included in our study. Logistic regression analyses were performed to compare the therapeutic efficacy in the two groups. Results In the ultrasound group (14 patients, 25.93%), intraoperative ultrasound was used for assisting hematoma removal and/or ventriculostomy during DC. In the control group (40 patients, 74.07%), ultrasound was not used during the operation and ventriculostomy was not performed. No statistically significant differences in age, sex, initial Glasgow Coma Scale (GCS) score, blood loss, postoperative intracranial pressure (ICP), duration of hyperosmolar therapy, or Glasgow Outcome Scale Extended (GOS‐E) score 6 months after injury were observed. No mortality was recorded in the ultrasound group. The mortality rate in the control group during hospitalization was 25% (p < 0.05). Conclusions Intraoperative ultrasound is helpful for intracranial hematoma removal and ventriculostomy with cerebrospinal fluid drainage and decreases mortality in experienced hands. The reason for higher mortality rate in the control group might result from poor hematoma clearance rate and poor postoperative intracranial pressure control. It is a useful tool for diagnosing and assisting with treatment in cases of TBI.

The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN HEMTs with N2 plasma surface treatment is investigated by using current-voltage (I-V), capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It is found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism at the entire reverse bias region (-30V - 0V). To the best of our knowledge, this is the first time that the analysis of the reverse gate leakage mechanism of W-gate AlGaN/GaN HEMTs has been studied. It is also found that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Further, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551eV-0.127eV and 0.112eV-0.201eV, respectively.