Reversible hydrogenation restores defected graphene to graphene

Deursen, Pauline M. G. van; Arjmandi-Tash, Hadi; Belyaeva, L. A.; Qi, Haoyuan; He, Jiao; Kofman, Vincent; Wu, Longfei; Muravev, Valery; Kaiser, Ute; Linnartz, H.; Hensen, Emiel J. M.; Hofmann, Jan P.; Schneider, Grégory F.

doi:10.1007/s11426-020-9959-5

Cited by 9 publications

(3 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This phenomenon can be attributed to the p ‐type doping effect due to the adsorbed water [ 4 ] as well as the air bone hydrocarbon contaminations. [ 57 ] A correlation between the observed effect and the Raman spectroscopy results is discussed in Section S6, Supporting Information. While the Dirac point shifts to higher gate voltages, the asymmetry in electron and hole conductivity becomes more pronounced.…”

Section: Resultsmentioning

confidence: 97%

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

et al. 2023

View full text Add to dashboard Cite

A critical point drying (CPD) technique is reported with supercritical CO2 as a cleaning step for graphene field‐effect transistors (GFETs) microfabricated on oxidized Si wafers, which results in an increase of the field‐effect mobility and a decrease of the impurity doping. It is shown that the polymeric residues remaining on graphene after the transfer process and device microfabrication are significantly reduced after the CPD treatment. Moreover, the CPD effectively removes ambient adsorbates such as water therewith reducing the undesirable p‐type doping of the GFETs. It is proposed that CPD of electronic, optoelectronic, and photonic devices based on 2D materials as a promising technique to recover their intrinsic properties after the microfabrication in a cleanroom and after storage at ambient conditions.

show abstract

Section: Resultsmentioning

confidence: 97%

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Notably, a clean and uniform surface of graphene is also important to form a compact and high quality heterojunction. [ 71,72 ]…”

Section: Resultsmentioning

confidence: 99%

“…Graphene/PTCDA/pentacene 1 ×10 5 400-700 [19] Graphene/perovskite (CH 3 NH 3 PBI 3 ) 1.8 × 10 2 400-800 [13] Graphene/SWNTs 1.0 × 10 2 400-1550 [57] Graphene/C 8 -BTBT 1.0 ×10 4 355 [58] SWNTs/C 60 2.0 × 10 2 1000-1400 [59] Graphene/P3HT 1.0 × 10 5 500 [9] Graphene/P3HT/perovskite (CH 3 NH 3 PBI 3−x Cl x ) 4.3 × 10 9 400-800 [20] Graphene/chlorophyll 1.0 × 10 6 400-700 [60] Graphene/rubrene 1.0 × 10 7 400-600 [7] Graphene/WS 2 1.0 × 10 6 400-700 [8] Graphene/PbS QDS 1.0 × 10 7 600-1000 [61] MoS 2 /g-C 3 N 4 4.0 × 10 0 270 [62] Graphene/C 60 1.1 × 10 2 405-1550 [63] Graphene/C 60 /pentacene 9.1 × 10 2 405-1550 [22] Graphene/C 60 /graphene (vertical) 3.4 × 10 5 405-1550 [64] Graphene/C 60 /graphene (planar) 5.5 × 10 3 360-658 [65] Graphene/C 60 /PbPc 2.2 × 10 3 405-980 This work and uniform surface of graphene is also important to form a compact and high quality heterojunction. [71,72] Moreover, graphene/C 60 /PbPc/Au phototransistor was fabricated and referred to as device D to evaluate the impact of the position of the C 60 acceptor layer within the three-layer planar heterojunction (Figure S5c, Supporting Information). [1,2] The difference between device A and device D is the position of source and drain electrodes (Au) within the heterojunction.…”

Section: Active Materials Responsivitymentioning

confidence: 99%

Near‐Infrared Phototransistor Based on Graphene/C₆₀/PbPc Heterojunction with Tunable Bidirectional Photoresponse

Dai

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

including the bandwidth, photoresponsivity, and photoconductive gain. [5,6] To overcome these limitations, graphene hybrid photodetectors incorporating photo sensitive materials such as single crystals, [7] 2D materials, [8] organic polymers, [9] colloidal quantum dots, [10,11] and silicon [12] have been widely adopted to enhance the photoresponse. For example, methylammonium triiodideplumbate (CH 3 NH 3 PbI 3 ) perovskite incorporated with graphene yielded a planar heterojunction photodetector with a broad spectral response from 405 to 800 nm. [13] Moreover, a hybrid graphene phototransistor adopting organic semiconductor poly (3-hexylthiophene) (P3HT) achieved a high photoresponse up to 10 5 A W −1 . [9] Despite that the combination of photosensitive layers and graphene has proved to be an effective strategy to enhance the performance of phototransistors, [14][15][16][17][18] the absence of an internal built-in electric field using a single type of light-sensitive layers leads to relatively low photoresponsivity for photodetection.Recently, the combination of a PN heterojunction into graphene optoelectronic devices as the absorption layer has been considered as an emerging means to enhance the responsivity and photoconductive gain. [19,20] The internal built-in electric field within the PN heterojunction enables efficient dissociation for excitons. [19] Meanwhile, different absorption wavelengths of the PN layers with proper band alignment can lead to unique bidirectional photoresponse, enabling the extension of the photo detection bandwidth. [21] Recently, a pentacene planar heterojunction was employed to integrate with graphene to fabricate a high-performance transistor, showing bidirectional photoresponse at different wavelength regions with an ultra-wide spectrum detection from 405 to 1550 nm. [22] Meanwhile, a vertical graphene-C 60 -graphene heterojunction in a 250 × 250 photodetector array was assembled to realize a high photoresponsivity of 3.4 × 10 5 A W −1 (λ = 405 nm, i.e., visible) with bidirectional photocurrent responses. [23] In spite of the considerable progress made in the last decades to achieve highperformance detection for visible and ultraviolet light, most of the graphene phototransistors are still limited to low photoresponsivity at the near-infrared (NIR) region. Graphene-organic heterojunction phototransistorshave great potential to achieve sensitive photoresponse owing to the excellent absorption of organic layers and fast charge transport in graphene. However, the photoresponse of most graphene-based phototransistors is limited within visible light region with narrow bandwidth and poor sensitivity in the near-infrared (NIR) region. Herein, a graphene-organic NIR phototransistor is fabricated by integrating an organic heterojunction layer composing of phthalocyanine molecules and fullerene C 60 onto the graphene channel. The phototransistor exhibits a high photoresponsivity of 2.2 × 10 3 A W −1 under 850 nm irradiation with the power density of 35.4 mW cm −2 (V ds = 1 V). Meanwhile, a ...

show abstract

Electrostatic Assembly of Graphene@SiO2 Composite for Enhanced Dispersive Solid-Phase Extraction: Targeting Eight Pesticide Residues

Liu,

Li,

et al. 2024

Chromatographia

View full text Add to dashboard Cite

Reversible hydrogenation restores defected graphene to graphene

Cited by 9 publications

References 50 publications

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

Near‐Infrared Phototransistor Based on Graphene/C₆₀/PbPc Heterojunction with Tunable Bidirectional Photoresponse

Electrostatic Assembly of Graphene@SiO2 Composite for Enhanced Dispersive Solid-Phase Extraction: Targeting Eight Pesticide Residues

Contact Info

Product

Resources

About

Reversible hydrogenation restores defected graphene to graphene

Cited by 9 publications

References 50 publications

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

Near‐Infrared Phototransistor Based on Graphene/C60/PbPc Heterojunction with Tunable Bidirectional Photoresponse

Electrostatic Assembly of Graphene@SiO2 Composite for Enhanced Dispersive Solid-Phase Extraction: Targeting Eight Pesticide Residues

Contact Info

Product

Resources

About

Near‐Infrared Phototransistor Based on Graphene/C₆₀/PbPc Heterojunction with Tunable Bidirectional Photoresponse