Reversible Switching of InP Nanowire Growth Direction by Catalyst Engineering

Wang, J Jia; Plissard, Sébastien; Verheijen, Marcel A.; Feiner, LF Lou; Cavalli, Alessandro; Bakkers, Epam Erik

doi:10.1021/nl401767b

Cited by 115 publications

(160 citation statements)

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“…For a long time, experimentalists have shown that by changing the growth parameters, such as NW diameter [34,35], growth temperature [36], or precursor flow [37] employed during the growth, it is possible to modify the stacking order of the bilayers. Consequently, the growth direction [38] or the crystal structure [34,36,37] However, the understanding of the mechanism behind these parameters are very limited. Very recently, Gil et al [35] reported the growth of pure ZB phase GaAs NWs with diameter between 5 and 15 nm, as shown in Fig.…”

Section: Section Ii: Crystal Structure and Morphology Of Iii-v Nanowimentioning

confidence: 99%

“…In 2013, Wang et al [30] demonstrated that high yield of 100-oriented InP arrays can be achieved simply by changing the filling of Au droplet before the elongation of NWs. Moreover, by similar strategy, so called "catalyst engineering" the growth direction of the InP NWs can be switched between 100 and 111 direction [38]. The growth direction switching overcomes the defect-limited InP NW-based device fabrication.…”

Section: Reviewmentioning

confidence: 99%

“…Thanks to the precise control of the InP stem growth direction [38], more complex InSb X-, and Y-shape NWs are realized by MOCVD method [217,218]. These structures are fundamental crucial for the incubation of Majorna Fermions device.…”

Section: Science China Materialsmentioning

confidence: 99%

“…Therefore, the neighboring NWs have certain possibility to merge and form nanocrosses [217]. In order to increase the yield of InSb nanocross with single crystal junction, the following work from the same group introduced EBL patterned substrates [218] and took advantage of controllable growth direction of InP stems [38].…”

Section: Science China Materialsmentioning

confidence: 99%

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Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Section: Section Ii: Crystal Structure and Morphology Of Iii-v Nanowimentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

Section: Science China Materialsmentioning

confidence: 99%

Section: Science China Materialsmentioning

confidence: 99%

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Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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“…In most cases, nanowires grown along the 111 B /000 -1 directions with the {111} B /{000 -1} catalyst/nanowire interfaces tend to naturally contain uncontrolled mixture of polytypes and/ or adopt planar defects [24][25][26], such as stacking faults or twins due to the small energetic differences for the stacking consequences in zinc-blende and wurtzite structures along their 111 B /000 -1 directions [27]. To date, scientific findings have been reported that the growth of free-standing III-V nanowires are with non-111 B /000 -1 growth directions [22,[27][28][29][30][31][32][33]. It is of interest to note that most of these non-111 B /000 -1 nanowires generally have high structural quality.…”

Section: Introductionmentioning

confidence: 99%

Direct realizing the growth direction of epitaxial nanowires by electron microscopy

2015

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The growth direction of nanowires is critically important for precisely controlling their physical and chemical properties and the performance of related nanowire-based electronic devices. Realizing the true orientations of nanowires is an important issue regarding designing and growth of nanowires with desired orientations and the subsequent applications. In this study, we demonstrated three electron microscopic techniques to determine the growth directions of epitaxial nanowires: mainly, correlating selected area electron diffraction pattern and brightfield imaging in transmission electron microscopes, tilting the nanowires until their growth directions parallel to the incident electron beams in scanning electron microscopes, and correlating the nature of cleavage planes of the nanowire substrates and nanowire projections in the side-view scanning electron microscopic investigations.

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III‐V Nanowires and Related Nanostructures

Joyce

2019

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Reversible Switching of InP Nanowire Growth Direction by Catalyst Engineering

Cited by 115 publications

References 43 publications

Growth of III-V semiconductor nanowires and their heterostructures

Growth of III-V semiconductor nanowires and their heterostructures

Direct realizing the growth direction of epitaxial nanowires by electron microscopy

III‐V Nanowires and Related Nanostructures

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