Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Cannaerts, Maarten; Nesládek, Miloš; Haenen, Ken; Stals, L.M.; Schepper, L. De; Haesendonck, C. Van

doi:10.1002/1521-396x(200108)186:2<235::aid-pssa235>3.0.co;2-q

Cited by 15 publications

(11 citation statements)

References 19 publications

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“…The same experiment is repeated after annealing sample #1 for 30 min at 200 °C. From previous works [14,15] it is known that a drop in surface conductivity can be expected when heating the samples to a temperature around 200 °C. In accordance with this fact, it is not possible to do STM imaging after annealing sample #2 for 30 min at a temperature as low as 200 °C.…”

Section: Introductionsupporting

confidence: 94%

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Deferme¹,

Tanasa²,

Amir³

et al. 2006

Diamond and Related Materials

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In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphology and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD (microwave plasma enhanced chemical vapour deposition) reactor containing a H2 or a H2/O2 mixture. A comparison is made between (100)-oriented CVD diamond films hydrogenated with and without a small addition of oxygen (1%). X-ray Photoelectron Spectroscopy (XPS) and UV Photoelectron Spectroscopy (UPS) measurements point to the presence of O-atoms at the (sub)-surface of the diamond film. The measured conductivity is significantly different for the two processes of hydrogenation. Annealing experiments point out that the samples, which were terminated using the H2/O2 mixture are still conductive enough after annealing at 410 °C to enable STM experiments. Here, we discuss the mechanism for STM imaging of H2/O2 treated diamond films, associated with surface states induced by the oxygen incorporation.

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Section: Introductionsupporting

confidence: 94%

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Deferme¹,

Tanasa²,

Amir³

et al. 2006

Diamond and Related Materials

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“…Deep pits with an average depth of 3 nm appear on the surface, which are attributed to the etching effect of the hydrogen plasma on CVD‐grown surfaces. [ 33 ] A closer look at the flat areas (Figure 1b,c) yields the characteristic dimer rows of (2 × 1) monohydride surface reconstruction. The row periodicity of 0.50 nm is similar to previous reports [ 26–28 ] (Figure 1d), and agrees well with the calculated distance (0.504 nm) between C–C dimer rows of the (2 × 1) reconstructed diamond surface.…”

Section: Atomically Resolved Imaging and Spectroscopy Of Bdd (100)mentioning

confidence: 97%

Localized Graphitization on Diamond Surface as a Manifestation of Dopants

Catalan

Kazuma

et al. 2021

Advanced Materials

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Doped diamond electrodes have attracted significant attention for decades owing to their excellent physical and electrochemical properties. However, direct experimental observation of dopant effects on the diamond surface has not been available until now. Here, low‐temperature scanning tunneling microscopy is utilized to investigate the atomic‐scale morphology and electronic structures of (100)‐ and (111)‐oriented boron‐doped diamond (BDD) electrodes. Graphitized domains of a few nanometers are shown to manifest the effects of boron dopants on the BDD surface. Confirmed by first‐principles calculations, local density of states measurements reveal that the electronic structure of these features is characterized by in‐gap states induced by boron‐related lattice deformation. The dopant‐related graphitization is uniquely observed in BDD (111), which explains its electrochemical superiority over the (100) facet. These experimental observations provide atomic‐scale information about the role of dopants in modulating the conductivity of diamond, as well as, possibly, other functional doped materials.

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“…This result conflicts with some previous reports, where nonwater based adsorbates were required before significant surface conduction could be seen. 19,20 For example, in the work of Foord et al, 20 CVD diamond surfaces freshly hydrogenated in a microwave plasma were found to be insulating ͑as here͒, but even when exposed in situ to water vapor and other common atmospheric gases in individual exposures no conductivity was observed. However, exposure to water vapor followed by exposure to gases such as formic acid, oxygen, or carbon dioxide produced a large increase in conductivity, although nitrogen gas was found to be ineffective in this regard.…”

Section: Discussionmentioning

confidence: 99%

“…A similar study has been carried out by Cannearts and co-workers. 19 In this case, electrical connections were used that remained permanently in contact with the sample during all steps prior to and following plasma exposure. This approach leads to the exposure of the electrical probes to atomic hydrogen at high temperatures, and can, hence, result in their corrosion.…”

Section: Introductionmentioning

confidence: 99%

Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces

Snidero

Tromson

Mer

et al. 2003

Journal of Applied Physics

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It is a common observation that diamond surface conductivity rises after exposure to hydrogen plasmas. Hydrogenation treatments are known to induce a p-type conductive layer, which is not present on non-hydrogenated samples. However, the particular mechanisms predominant in the plasma treatment process are still controversial, and several antagonist conditions have been reported to be of importance, such as sample temperature ͑500°C to 800°C͒, duration ͑a few seconds to 1 h͒, and microwave ͑MW͒ power density, etc. Further, the post-plasma step is also crucial, especially since the surface conductivity has been reported to be affected by the presence of an adsorbate layer on the diamond surface. By setting up the arrangement to enable the in situ measurement of the surface conductivity after treatment, we have been able to control all parameters that could affect the surface conductivity, in order to determine those of importance. Among the parameters studied, we were able to analyze the influence of the surface temperature, the gas phase exposure ͑dry air, wet air, neutral gas, CH 4 , O 2 , and H 2 ), the MW plasma conditions (O 2 ,H 2 ) as well as the exposure to UV ͑Hg and deuterium͒ and the importance of the sequence and duration of each of these treatments. We found that hydrogenated surfaces are strongly influenced by the combination of wet air exposure and UV light. We noticed that the effect of UV light is persistent and cannot be related to direct photoconduction and has to be attributed to a modification of the trapped defect population. This can, therefore, be compared with the modification of filled defect density as observed in persistent photoconduction.

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Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Cited by 15 publications

References 19 publications

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Localized Graphitization on Diamond Surface as a Manifestation of Dopants

Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces

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