Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Luo, Wun-Cheng; Hou, Tuo‐Hung; Lin, Kuan-Liang; Lee, Yao-Jen; Lei, Tan Fu

doi:10.1016/j.sse.2013.08.005

Cited by 23 publications

(11 citation statements)

References 14 publications

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“…Similarly, temperature‐dependent conduction of HRS also has been reported in oxygen vacancy filaments based resistive switching which the existence of polarization centers facilitate the transport . In Figure S8b (Supporting Information), the currents of LRS presents no a general tendency, while the resistances of LRS in vacancy filaments mode are always inversely proportional to the temperature . It could be because the lower temperature and larger set voltage simultaneously applied to the device causing different multi V I filaments at various temperature.…”

Section: Resultssupporting

confidence: 56%

Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Huang

Chen

et al. 2019

Adv Materials Inter

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Lead halide perovskites‐based memory devices have attracted considerable interest due to their unique current–voltage (I–V) hysteresis. Herein, all‐inorganic CsPbI3 perovskite film surviving 30 d of air storage is prepared by using a poly‐vinylpyrrolidone‐assisted passivation method under fully open‐air condition. Afterwards, a memory device with a sandwich structure of Ag/CsPbI3/indium tin oxide is manufactured. From I–V characteristics of pristine device, a spontaneous reaction between the active Ag electrode and I− ions under air exposure is suggested. Furthermore, complete degradation of Ag electrode and formation of AgIx are verified, which also accompanies with generation of more iodine vacancies (VI) in perovskite film. The memory device with AgIx layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio (above 106), nonvolatile, reliable, and reproducible switching performance. Cell area and temperature dependent characteristics propose that the resistive switching is dominated by VI filament in low‐resistance state and thermally assisted hopping in high‐resistance state. This study provides a new insight to understand switching behavior from the way of electrode degradation and metal iodide formation in lead iodide perovskites‐based memory devices and also suggests a potential application for AgIx‐induced resistive switching in CsPbI3‐based memory device.

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Section: Resultssupporting

confidence: 56%

Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Huang

Chen

et al. 2019

Adv Materials Inter

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“…Most of the reports provided evidence of the active metal filament via CAFM or TEM results . In recent years, a new mechanism, the dual‐filament model, was proposed, by which the filament coexists in the same path for both the VCM and ECM . However, there is a lack of direct evidence supporting this theory.…”

mentioning

confidence: 99%

Direct Observation of Dual‐Filament Switching Behaviors in Ta₂O₅‐Based Memristors

Chang

Chen

Huang

et al. 2017

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“…To describe the possible conduction mechanism, the temperature dependencies of the low resistance state (LRS) current at 0.5 V are summarized in Figure 2 d. The LRS currents of the C1 memory device increased with the increasing temperature between 273 and 393 K, indicating that the resistive switching material was semiconducting rather than metallic [ 30 ]. This suggests that the carbon-rich citrus thin film tended to form conducting filaments containing carbon elements.…”

Section: Resultsmentioning

confidence: 99%

Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films

2021

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Natural citrus thin films on an indium tin oxide (ITO)/glass substrate were synthesized using the solution method for resistive random access memory (RRAM) applications. The results indicated that the citrus memory device possessed stable resistive switching behavior. For a clear understanding of the role of the interface reaction between the top metal electrode and the citrus film, we investigated the influences of various top electrode (TE) materials on the resistive switching in TE/citrus/ITO devices. In comparison with Au/citrus/ITO and Ti/citrus/ITO devices, the Al/citrus/ITO device can be reproduced with a DC voltage of more than 100 times while only showing a slight decrease in the ON/OFF ratio. In addition, the Al/citrus/ITO device exhibited a high ON/OFF ratio of over 104 and an outstanding uniformity, which was attributed to the fast formation of a native oxide layer (AlOx), as confirmed by the line scan analysis. This indicated that the interface layer, created by the redox reaction between the Al electrode and citrus film, played an important role in the resistive switching properties of TE/citrus/ITO structures. These findings can serve as design guidelines for future bio-based RRAM devices.

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Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Cited by 23 publications

References 14 publications

Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Direct Observation of Dual‐Filament Switching Behaviors in Ta₂O₅‐Based Memristors

Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films

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Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Cited by 23 publications

References 14 publications

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors

Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films

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Product

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Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Silver Iodide Induced Resistive Switching in CsPbI₃ Perovskite‐Based Memory Device

Direct Observation of Dual‐Filament Switching Behaviors in Ta₂O₅‐Based Memristors