Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination

Brody, Jed

doi:10.1016/s0927-0248(02)00350-1

Cited by 33 publications

(22 citation statements)

References 11 publications

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“…This simplification is valid in transient measurements when S < D 4W , where S is the surface recombination velocity and D is the diffusion coefficient for silicon. 12,13 For the wafers used in this manuscript (D=11.97 cm 2 s 1 and W =280 µm) that means that this simplification works so long as S < 100 cm s 1 .…”

Section: Lifetime Models Used In This Workmentioning

confidence: 99%

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

et al. 2016

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This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.

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Section: Lifetime Models Used In This Workmentioning

confidence: 99%

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

et al. 2016

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“…The measured effective carrier lifetime (τ eff ) value has contributions from the bulk (τ bulk ) and the two wafer surfaces (τ s ) of the silicon sample and these two parameters are related with τ eff as 31,32 1 the wafer, respectively. S eff is surface recombination velocity (SRV).…”

Section: Minority Carrier Lifetimementioning

confidence: 99%

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

et al. 2015

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The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).

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“…This equation is based on the assumption that the values of S eff on both surfaces are equal. An upper bound for S eff can be determined by assuming there is no bulk recombination ( τ b →∞) . The thicknesses of the a‐Si:H layers were measured using a variable‐angle spectroscopic ellipsometry device (SE, J.…”

Section: Methodsmentioning

confidence: 99%

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Guo

Zhang

Meng

et al. 2015

Physica Status Solidi (a)

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The properties of hydrogenated amorphous silicon (a-Si:H) thin layers were studied by spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) measurements to determine their effects on the surface passivation of crystalline silicon (c-Si) in heterojunction solar cells. It was demonstrated that the high bulk quality of a-Si:H layers with denser structures was not sufficient for the passivation of c-Si surfaces in Silicon Heterojunction (SHJ) solar cells, in which the passivation performance is strongly governed by the total hydrogen content (C H ) as a-Si:H layers are ultra-thin. High effective carrier lifetime and implied open-circuit voltage (V oc,im ), as well as low surface recombination velocity, were obtained at the appropriate C H values, and the optimal windows of C H and of the hydrogen content in the Si-H 2 configuration (C 2 ) were determined to be 5.0 $ 8.5 and 2.9 $ 6.8 at.%, respectively. For C H values higher than 8.5 at.%, the passivation effect was degraded due to the deteriorated bulk properties of the a-Si:H layers. However, V oc,im decreased when C H was lower than 5.0 at.% because the number of H atoms was insufficient to saturate the dangling bonds at the a-Si: H/c-Si interface even though the a-Si:H layers had dense microstructures.

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Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination

Cited by 33 publications

References 11 publications

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

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