Review of a direct epitaxial approach to achieving micro–LEDs

Cai, Yuanjing; Bai, J.; Wang, Tao

doi:10.1088/1674-1056/ac90b5

Cited by 6 publications

(5 citation statements)

References 50 publications

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“…To attempt to address the challenges mentioned above, the Sheffield team has developed a direct epitaxy approach which we call the CSE approach [97]. The CSE is different from homoepitaxy or heteroepitaxy or any conventional selective epitaxy.…”

Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

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The micro-LED roadmap: status quo and prospects

Lin,

Wu,

Kuo

et al. 2023

J. Phys. Photonics

Self Cite

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Micro LED can play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, AR/MR etc., at the same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, and the micro LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based RGB micro LED chips and color-conversion enhanced Micro LEDs are the major contenders for the full-color high resolution displays. Both of the methods need revolutionary ways to perfect the material qualities, fabricate the device, assemble the individual parts into a system. In this roadmap, we will highlight the current status and challenges of the micro LED-related issues, and discuss the possible advances in science and technology that can stand up to the challenges. The innovation in epitaxy, such as the tunnel junction, the direct epitaxy and nitride based quantum wells for red and ultraviolet, can provide critical solutions of the micro LED performance in various aspects. The quantum scale structure like nanowire or nanorod can be crucial for the scaling of the devices. Meanwhile, the color conversion method, which uses colloidal quantum dots as the active material, can provide a hassle-free way to assemble a large micro LED array, and emphasis on the full color demonstration via colloidal quantum dots. These quantum dots can be patterned by porous structure, inkjet or photo-sensitive resin. In addition to the micro LED devices, the peripheral components or technologies are equally important. Microchip transfer and repair, heterogeneous integration with the electronics and the novel 2D material cannot be ignored or the overall display module will be very power-consuming. The augmented reality is one of the potential customer for our micro-LED displays and the user experience so far is limited due to lack of the truly qualified display. Our analysis showed the micro LED is on the way to address and solve the current problems, such as high loss optical coupling and narrow field of view. All these efforts are channeled to achieve an efficient display with all ideal qualities that meet our most stringent viewing requirements and expect it to become an indispensable part of our daily life.

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Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

“…To move forward, we believe the direct epitaxy method has to address (or solve) the following issues in the next 5 to 10 years [97]:…”

Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

The micro-LED roadmap: status quo and prospects

Lin,

Wu,

Kuo

et al. 2023

J. Phys. Photonics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The quantum efficiency of small-size LEDs is considerably lower than that of large-size LEDs as a result of the dry etching process, which becomes a considerable problem when the LED size is ≤10 µm. A direct epitaxy method for µLEDs in which the dry etching technique used to form the µLED mesa is no longer required was conceived and developed by the Sheffield team and is called the “confined selective epitaxy” (CSE) approach [ 81 ]. Steady emission color, extremely high external quantum efficiency, reduced leakage current, improved indium integration to generate red emissions, and low parasitic capacitance are its many main benefits.…”

Section: Solution For Increasing Eqe Of µLedsmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang

Kang

et al. 2023

Micromachines

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GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

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“…The ultrahigh yield requirement for RGB micro-LEDs and fabrication bottleneck for red micro-LEDs result in high cost, which hinders the development and application of full-color micro-LED displays 61,62 . An alternate method to achieve full-color displays is using QD-CCF technology; the patterning and morphology modification of QD-CCF help reduce optical crosstalk and improve the efficiency, resolution, and reliability of full-color micro-LED displays 63,64 . In this case, the fabrication of micro-LEDs includes the epitaxial growth of wafers, device preparation, defect detection, defect repair, mass transfer, and full-color displays, which should be improved to achieve the commercialization of micro-LED displays 65−71 .…”

Section: Overview Of Micro-led-based Full-color Displaysmentioning

confidence: 99%

Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

Lai,

Liu,

et al. 2023

OES

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Micro-light-emitting diodes (micro-LEDs) with outstanding performance are promising candidates for next-generation displays. To achieve the application of high-resolution displays such as meta-displays, virtual reality, and wearable electronics, the size of LEDs must be reduced to the micro-scale. Thus, traditional technology cannot meet the demand during the processing of micro-LEDs. Recently, lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing, adjustable energy and speed of the laser beam, no cutting force acting on the devices, high efficiency, and low cost. Herein, we review the techniques and principles of laser-based technologies for micro-LED displays, including chip dicing, geometry shaping, annealing, laserassisted bonding, laser lift-off, defect detection, laser repair, mass transfer, and optimization of quantum dot color conversion films. Moreover, the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.

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Review of a direct epitaxial approach to achieving micro–LEDs

Cited by 6 publications

References 50 publications

The micro-LED roadmap: status quo and prospects

The micro-LED roadmap: status quo and prospects

Recent Advances on GaN-Based Micro-LEDs

Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

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