Review of bias-temperature instabilities at the III-N/dielectric interface

Ostermaier, Clemens; Lagger, P.; Reiner, Maria; Pogány, D.

doi:10.1016/j.microrel.2017.12.039

Cited by 36 publications

(11 citation statements)

References 108 publications

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“…In order to investigate a broad distribution of overall traps through the gate region, which are widely believed to be applicable to GaN HFETs, capture emission time (CET) maps [21,22,23] were extracted using a stress–recovery sequence before and after proton irradiation. A CET map can be constructed from the shift of the I–V or Capacitance -voltage (C–V) characteristics.…”

Section: Resultsmentioning

confidence: 99%

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Keum

Kim

2019

Micromachines

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In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

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Section: Resultsmentioning

confidence: 99%

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Keum

Kim

2019

Micromachines

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“…While there is strong evidence of electron trapping in the gate dielectric as a primary source of V T instability, trapping at interface states located at the dielectric/semiconductor interface is also a possibility. Distinguishing between the two mechanisms is not straightforward [68], and more detailed studies are needed.…”

Section: B Bias-temperature Instability Associated With the Gate Dielectric Of Gan Mis-hemtsmentioning

confidence: 99%

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Alamo

Lee

2019

IEEE Trans. Electron Devices

100

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GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.

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“…It is understood that hysteresis is associated with charging of interface trap states, therefore it offers a measure to quantify the density of these interface trap states. Depending on the AC signal frequency and the up/down voltage sweeping rate, density of a part of slow interface trap states could be estimated [22]. Electrical de-trapping is first performed by maintaining the gate voltage (VG) at -4 V for 2 min, followed by applying a slow ramping DC bias at a speed of 0.…”

Section: Interface Trap State Characterizationmentioning

confidence: 99%

“…During the measurements, the MIS HEMT capacitor is biased above VT,MIS in order to have unchaged 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 A c c e p t e d M a n u s c r i p t 9 occupancy of the AlGaN/GaN interface trap states in the bandgap [23]. The Equivalent parallel conductance can be extracted using the measured parallel capacitance (Cp,meas), parallel conductance (Gp,meas), Cox, and ω via the equation derived from MIS capacitor equivalent circuit model [5,35] ( ) 22 ox p,meas p 2 22 p,meas ox p,meas…”

Section: Interface Trap State Characterizationmentioning

confidence: 99%

Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

Lee

Bayram

2019

Mater. Res. Express

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Investigation of annealed, thin(~ 2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulatorsemiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies Annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructures on Si(111) are fabricated and studied via capacitance-voltage (C-V) measurements to quantify densities of fast and slow interface trap states and via current-voltage (I-V) measurements to investigate dominant gate current leakage mechanisms. Dual-sweep C-V measurements reveal small voltage hysteresis (~ 1 mV) around threshold voltage, indicating a low slow interface trap state density of ~ 10 9 cm -2 . Frequency-dependent conductance measurements show fast interface trap state density ranging from 8 × 10 12 to 5 × 10 11 eV -1 cm -2 at energies from 0.275 to 0.408 eV below the GaN conduction band edge. Temperature-dependent I-V characterizations reveal that trap-assistant tunneling (TAT) dominates the reverse-bias carrier transport while the electric field across the Al2O3 ranges from 3.69 to 4.34 MV/cm, and the dominant Al2O3 trap state energy responsible for such carrier transport is identified as 2.13 ± 0.02 eV below the Al2O3 conduction band edge. X-ray photoelectron spectroscopy measurements on Al2O3 before and after annealing suggest an annealing-enabled reaction between Al-O bonds and inherent H atoms. Overall, we report that annealed, thin-Al2O3 dielectric is an effective (Al)GaN surface passivation alternative when minimizing passivation-

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Review of bias-temperature instabilities at the III-N/dielectric interface

Cited by 36 publications

References 108 publications

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

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Review of bias-temperature instabilities at the III-N/dielectric interface

Cited by 36 publications

References 108 publications

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

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Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies