Review of displacement damage effects in silicon devices

Srour, J. R.; Marshall, C.J.; Marshall, P.W.

doi:10.1109/tns.2003.813197

Cited by 627 publications

(375 citation statements)

References 148 publications

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“…4. Along with transient events, proton impacts produce permanent hot pixels due mainly to atomic displacements in the silicon lattice (Srour et al 2003;Hopkinson 1996). The intensity of a bright pixel is not stable in time.…”

Section: Saamentioning

confidence: 99%

The CoRoT satellite in flight: description and performance

Auvergne

Bodin

Boisnard

et al. 2009

A&A

636

531

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Context. CoRoT is a space telescope dedicated to stellar seismology and the search for extrasolar planets. The mission is led by the CNES in association with French laboratories and has a large international participation. The European Space Agency (ESA), Austria, Belgium, and Germany contribute to the payload, and Spain and Brazil contribute to the ground segment. Development of the spacecraft, which is based on a PROTEUS low earth orbit (LEO) recurrent platform, commenced in October 2000, and the satellite was launched on December 27, 2006. Aims. The instrument and platform characteristics prior to launch have been described in ESA publication (SP-1306). In the present paper we explain the behaviour in flight, based on raw and corrected data. Methods. Five runs have been completed since January 2007. The data used here are essentially those acquired during the commissioning phase and from a long run that lasted 146 days. These enable us to give a complete overview of the instrument and platform behaviour for all environmental conditions. The ground based data processing is not described in detail because the most important method has been published elsewhere. Results. We show that the performance specifications are easily satisfied when the environmental conditions are favourable. Most of the perturbations, hence data corrections, are related to LEO perturbations: high energy particles inside the South Atlantic Anomaly (SAA), eclipses and temperature variations, and line of sight fluctuations due to the attitude control system. Straylight due to the reflected light from the earth, which is controlled by the telescope and baffle design, appears to be negligible.

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Section: Saamentioning

confidence: 99%

The CoRoT satellite in flight: description and performance

Auvergne

Bodin

Boisnard

et al. 2009

A&A

636

531

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“…Even under high energy irradiation, defect clusters which may degrade detector performance, usually referred to as "terminal subclusters," are produced when the recoil loses the last 5-10 keV of energy. 49 Periodic boundary conditions were applied only to Y and Z, but not to the implant direction X. SRIM 38 simulations were used to estimate the simulation cell size for each ion type and substrate material in order to avoid the self-overlapping of cascades. Simulations were done at 0 K to prevent dynamic annealing and to ensure that the results of the characterization of damage are not affected by other mechanisms related to thermal annealing.…”

Section: Implant Cascadesmentioning

confidence: 99%

Molecular dynamics simulations of damage production by thermal spikes in Ge

López¹,

Pelaz²,

Santos³

et al. 2012

Journal of Applied Physics

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Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

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“…NIEL is that part of the energy introduced via both elastic (coulombic and nuclear) and nuclear inelastic interactions that produce the initial vacancy interstitial pairs and phonons. 23 The Mean dark signal increase contribution is due to displacement damage dose (D d ). The D d is given by the particle fluence, , times NIEL, where the latter quantity is the rate at which non-ionzing energy is lost to the production of atomic displacements in a given material.…”

Section: A Mean Dark Signal Increasementioning

confidence: 99%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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Review of displacement damage effects in silicon devices

Cited by 627 publications

References 148 publications

The CoRoT satellite in flight: description and performance

The CoRoT satellite in flight: description and performance

Molecular dynamics simulations of damage production by thermal spikes in Ge

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

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