Review of laser microscale processing of silicon carbide

Pecholt, Ben; Gupta, Saurabh; Molian, Pal

doi:10.2351/1.3562522

Cited by 45 publications

(14 citation statements)

References 98 publications

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“…The formation of C‐rich regions in SiC during Nd:YAG lasers irradiation has been widely discussed in literature, but, to the best of the authors’ knowledge, a coherent and continuous graphite layer covering the SiC surface has never been observed in SiC materials after laser irradiation neither in vacuum, inert gas nor air conditions.…”

Section: Resultsmentioning

confidence: 99%

“…The formation of C-rich regions in SiC during Nd:YAG lasers irradiation has been widely discussed in literature, [19][20][21] but, to the best of the authors' knowledge, a coherent and continuous graphite layer covering the SiC surface has never been observed in SiC materials after laser irradiation neither in vacuum, inert gas nor air conditions. C-rich layers at the SiO 2 /SiC interface were observed after thermal oxidation processes of semiconductor SiC involving long dwelling time (several hours).…”

Section: Characterization Of the Laser-affected Zonementioning

confidence: 99%

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Effect of pulsed laser irradiation on the SiC surface

Suess

Wilhelmi

Salvo

et al. 2017

Int J Applied Ceramic Tech

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The effect of a pulsed laser irradiation (Nd:YVO4, 1064 nm) in air on the surface morphology and chemical composition of silicon carbide and on the adhesion with an epoxy adhesive was investigated. Scanning and transmission electron microscopies, atomic force microscopy, and X‐ray photoelectron spectroscopy revealed that the laser treatment reduced the contamination level of the surface and induced the formation of a silica‐based nanostructured columnar layer on the SiC surface. The mechanism for the formation of five different microstructural regions is described in this paper. In addition, the formation of a 5‐10‐nm‐thick graphite layer between the oxide layer and SiC was observed. The joining test with Hysol® EA9321 showed that the nanostructured columnar silica layer was completely infiltrated by the adhesive, thus leading to a significant increase in the joined specific area and a mechanical interlocking at the adhesive/substrate interface. Nevertheless, the apparent shear strength of the joined SiC samples slightly decreased after the laser processing of the surfaces from about 42 MPa for lapped SiC to about 35 MPa for laser‐nanostructured SiC. The formation of the graphite layer was found to be responsible of the poor adhesion properties of the SiC surfaces modified by the laser radiation.

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Section: Resultsmentioning

confidence: 99%

Section: Characterization Of the Laser-affected Zonementioning

confidence: 99%

Effect of pulsed laser irradiation on the SiC surface

Suess

Wilhelmi

Salvo

et al. 2017

Int J Applied Ceramic Tech

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“…In addition, SiC has wider band gap, higher breakdown field, and higher saturation velocity than silicon, recognized as the most potential electronic component for micro-electron mechanical systems (MEMS) [3][4][5] used in harsh environment. Instead of the difficulty in conventional mechanical machining on the surface of SiC elements due to their extreme thermodynamic stability and chemical inertness, pulse laser ablation is emerging as an attractive alternative, offering a clean and simple method with high etch rate [6][7][8]. Therefore, knowledge of the laser ablation process of SiC ceramics can be necessary and meaningful.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the laser ablation of SiC ceramics using micro‐Raman mapping technique

Yang

Huang

et al. 2016

J Adv Ceram

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Abstract:Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm 2 was obtained by 1-on-1 mode and its damage morphology appeared in the form of "burning crater" with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO 2 in the center with higher energy density, maybe because of deficiency of O 2 atmosphere in the ablated area, elimination of SiO 2 by carbon at 1505 ℃, or evaporating at 2230 ℃.

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“…Zhao et al 4 found a great improvement of photocurrent for photovoltaic devices application originated from the formation of nanostructures on the surface of the SiC sample. 6,7 Recently, the ultrafast laser has proved to be a versatile tool for micromachining. Unfortunately, the devices are generally limited in electronic devices performance to below 250°C and in mechanical devices performance to below 600°C.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of nanostructures on silicon carbide surface and microgroove sidewall using 800-nm femtosecond laser

2015

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Nanoripples and nanoparticles have been fabricated on the surface of a silicon carbide sample with the irradiation of an 800-nm femtosecond laser in an underwater environment. When a linearly polarized laser was used, the nanoripples were perpendicular to the polarization direction of the incident laser, and the period of the nanoripples was dependent on the number of pulses. When a circularly polarized laser was used, nanoparticles with a diameter of approximately 80 nm were formed. In addition, we observed two kinds of nanoripples on the sidewall of the silicon carbide microgroove fabricated by femtosecond laser irradiation followed by chemical wet etching. When the polarization direction was aligned perpendicular to the writing direction, ripples parallel to the surface of the sample were formed. We attribute the formation of this kind of ripple to interference of the incident laser and the reflected wave. When the polarization direction was aligned parallel to the writing direction, the ripples are perpendicular to the surface of the sample. We attribute the formation of this kind of ripple to interference of incident laser and bulk electron plasma wave. A scanning electron microscope equipped with an energy dispersive X-ray spectroscope was employed to characterize the morphology of the structures. Khuat, Chen, and Dao: Fabrication of nanostructures on silicon carbide surface and microgroove sidewall. . . Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 07/30/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Optical Engineering 077102-4 July 2015 • Vol. 54(7) Khuat, Chen, and Dao: Fabrication of nanostructures on silicon carbide surface and microgroove sidewall. . . Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 07/30/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Tao Chen received his PhD in electronic science and technology from Xi'an Jiaotong University in 2011. Currently, he is a lecturer in Xi'an Jiaotong University. His current interests include ultrafast nonlinear optics and femtosecond micromachining. Vanluu Dao: Biography is not available. Optical Engineering 077102-5 July 2015 • Vol. 54(7) Khuat, Chen, and Dao: Fabrication of nanostructures on silicon carbide surface and microgroove sidewall. . . Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 07/30/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

show abstract

Review of laser microscale processing of silicon carbide

Cited by 45 publications

References 98 publications

Effect of pulsed laser irradiation on the SiC surface

Effect of pulsed laser irradiation on the SiC surface

Investigation on the laser ablation of SiC ceramics using micro‐Raman mapping technique

Fabrication of nanostructures on silicon carbide surface and microgroove sidewall using 800-nm femtosecond laser

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