Review of molecular layer deposition process and application to area selective deposition via graphitization

Abstract

As patterning technology for manufacturing highly integrated devices develops in the current semiconductor market, sophisticated technology nodes of 5 nm or smaller are required. Area selective deposition (ASD) is a promising technology alternative to traditional top-down methods by reducing-edge placement error (EPE) and creating self-alignment. A new strategy for applying the qualified molecular layer deposition (MLD) process of highly conformal deposition to ASD as an inhibition material is being studied. In the case of metalcones manufactured using an aromatic ring as an organic precursor, graphitic carbonization proceeds through high-temperature annealing, and the inhibition property can be activated by removing surface functional groups. The characteristics of feasible patterning can be noted as metal elements in the thin film are removed during the annealing process, especially in the case of graphitic carbon. In this review, we introduce the potential application of MLD materials in the development of inhibitors for advanced ASD