Review of Rapid Thermal Annealing of Ion Implanted GaAs

Abstract

Results of rapid thermal annealing (RTA) of ion implanted normalGaAs for times of 1–100s are reviewed. Comparison between silicon, selenium, and other donor ions is presented and the highest doping levels achieved are highlighted. P‐type dopants such as zinc, magnesium, and beryllium are also discussed, as well as the use of dual implants to enhance activation. N‐type doping levels up to 3×1019 cm−3 have been demonstrated, whereas for p‐type doping levels approaching 1020cm−3 with little diffusion have been achieved. The less stringent requirements imposed on both the encapsulant and substrate material when RTA is used are also discussed.

Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

“…The AlN was resistive (>10 Subsequently an isochronal annealing program was carried out in order to study the lattice damage recovery. The annealing steps were performed in a Rapid Thermal Annealing apparatus [6] between graphite strips under a Nitrogen atmosphere at ambient pressure. Additionally, a second, un-implanted piece of GaN was placed on the sample as a proximity cap to protect the surface.…”

Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing

“…39 The annealing process stimulates a thermal removal of the introduced lattice damages and enhances the electrical activity of implanted impurities to its practically highest level. 40,41 In the case of MeV-ion implantation, however, the concentration of the implanted ions in the near surface volume is not large enough to play a dominant role for the properties of this region.…”

Deep radiative levels in as-grown and implanted rapid thermal annealed InP

“…5 The variation of the intensity of the peak with temperature is shown in Fig. 861-e V peak is characterized by a large half-width and a temperature dependence of the peak energy which did not follow the band gap.…”