Interdiffusions at Ge/GaAs heterojunctions formed by the epitaxial deposition of Ge films on GaAs have been studied for temperatures ranging from 650–800 °C. The diffusion coefficients of Ge in GaAs have been found to be 1.6×10−5 exp(−2.06/kT) for Cr: and Si:doped GaAs. After the diffusion heat treatment, Ge was found to be p type and ohmic.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.