Review on light management by nanostructures in chalcopyrite solar cells

Abstract

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Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cells

“…Hence, the introduction of the SiO 2 layer changes the rear reflection but compared with the reference some light still exits the solar cell. Light trapping is then needed to take advantage of the rear increased optical reflection, in good agreement with other studies . From these simple measurements, it is hard to find a quantification on the increase of the J sc between the increase in the reflection and the passivation effect.…”

“…Light trapping is then needed to take advantage of the rear increased optical reflection, in good agreement with other studies. [17,[19][20][21][27][28][29][30] From these simple measurements, it is hard to find a quantification on the increase of the J sc between the increase in the reflection and the passivation effect.…”

Efficiency increased to 15.2% for ultra‐thin Cu(In,Ga)Se2 solar cells

“…Vermang et al used rear passivation to attain devices of 13.5% efficiency at 0.4 μm . In our experiments, we did not use additional passivation like Vermang's or light‐management schemes as reviewed by Schmid . This indicates that even higher device performance is possible.…”

“…Recent studies from Vermang et al investigated back passivation of CIGS solar cells, similar to the concept of passivated emitter, rear locally diffused silicon solar cells . In our work, we have not used passivation or light management as reviewed by Schmid et al This indicates that even further efficiency gains are possible by combining our growth techniques with passivation and/or light management. Duchatelet et al made efficiency gains in ultra‐thin devices with electrodeposited CIGS films .…”

Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer

“…By contrast, low FF values, together with evidences of series resistance, are good indications of point contact structures which are not optimized. [24,[83][84][85][86][87][88] Such properties can contribute to the enhancement of the optical path length of mostly the weakly absorbed near infra-red (NIR) photons within the CIGS region, thus enabling higher EQE in the NIR range close to the CIGS bandgap (>700 nm), as seen in the optical results of Figure 4b,c. However, we note that there is a difference of 89 mV between both devices in V OC .…”