Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition

Ning, Jing; Wang, Dong; Chai, Yang; Feng, Xinliang; Mu, Meishan; Guo, Lixin; Zhang, Jincheng; Hao, Yue

doi:10.1088/1361-6528/aa6c08

Cited by 17 publications

(13 citation statements)

References 87 publications

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“…The synthesis usually is assisted by plasma or very high temperature. In case of plasma assisted deposition, the quality of the material can be adversely affected, while the growth by high temperature can severely limit the choice of the substrates [41]. Moreover, the high cost of the SiC substrate and of the process itself hinders the spread of the growth on SiC.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale transfer-free process of multi-layered graphene grown by chemical vapor deposition

Ricciardella

Vollebregt

Boshuizen

et al. 2020

Mater. Res. Express

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Chemical vapour deposition (CVD) has emerged as the dominant technique to combine high quality with large scale production of graphene. The key challenge for CVD graphene remains the transfer of the film from the growth substrate to the target substrate while preserving the quality of the material. Avoiding the transfer process of single or multi-layered graphene (SLG-MLG) has recently garnered much more interest. Here we report an original method to obtain a 4-inch wafer fully covered by MLG without any transfer step from the growth substrate. We prove that the MLG is completely released on the oxidized silicon wafer. A hydrogen peroxide solution is used to etch the molybdenum layer, used as a catalyst for the MLG growth via CVD. X-ray photoelectron spectroscopy proves that the layer of Mo is etched away and no residues of Mo are trapped beneath MLG. Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch. These results mark a significant step forward for numerous applications of SLG-MLG on wafer scale, ranging from micro/nano-fabrication to solar cells technology.

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Section: Introductionmentioning

confidence: 99%

Wafer-scale transfer-free process of multi-layered graphene grown by chemical vapor deposition

Ricciardella

Vollebregt

Boshuizen

et al. 2020

Mater. Res. Express

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“…Although, in recent years some progress has been made [14], this task still remains rather challenging especially because it is needed to be implemented on the industrial scale. Correspondingly, a scalable deposition of highly crystalline sp 2 -hybridized carbon films onto dielectric and semiconductor support is eagerly awaited because it will open avenues towards fabrication of graphene-based photonic and optoelectronic devices [2,15,16].…”

Section: Introductionmentioning

confidence: 99%

Strong optical nonlinearity of ultrathin graphitic films synthesized on dielectric substrates

Kaplas

Babaeian

Cromey

et al. 2019

Applied Surface Science

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We propose and demonstrate a scalable technique to grow a thin polycrystalline graphitic film directly onto a fused silica substrate. The technique is based on the pyrolysis of a photoresist in the presence of a sacrificial 10 nm thick nickel catalyst layer. The synthesized graphitic film with a thickness of about 50 nm possesses almost constant 40% absorptance over visual and near infrared spectral regions. By using Raman characterization, third harmonic generation spectroscopy, and the Z-scan technique we perform a comparative study of the films pyrolyzed with and without a Ni catalyst. We show that the amorphous carbon dominates the linear and nonlinear optical properties of the resist film pyrolyzed without the Ni catalyst. In contrast, in presence of a Ni catalyst layer, the pyrolysis leads to a graphitic film that demonstrates a strong saturable absorption behavior at 1550 nm wavelength and has a nonlinear refractive index comparable with that of graphene. Thus, the developed, transfer-free synthesis technique provides an alternative route towards the controllable growth of wafer scale graphitic films on the dielectric substrates for photonics applications.

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“…Also, synthesis of graphene on sapphire would provide an alternative route to obtain metal‐free graphene that could be transferred onto final target substrates, something that to date has not been achieved at wafer scale for epitaxial graphene on SiC due to the very strong epitaxial interaction with the growth substrate. To date, several works have reported attempts to synthesize graphene directly onto insulating substrates, mostly silicon and sapphire . Most of them use metal catalysts sacrificially deposited on the substrate or in the vapor phase to aid the growth, which does not resolve the metallic contamination issue.…”

mentioning

confidence: 99%

Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene

Mishra

Forti

Fabbri

et al. 2019

Small

117

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wafer-scale, with good crystallinity and with contamination levels compatible with large-scale back-end-of-line (BEOL) integration. At present, chemical vapor deposition (CVD) on catalytic copper (Cu) substrates is widely recognized as the most promising route to obtain scalable monolayer graphene for electronic and optoelectronic applications. [1][2][3][4] However, significant hurdles are limiting the actual integration of CVD graphene grown on Cu for most applications. In the first instance, the unavoidable transfer process over wafer-scale is rather cumbersome and introduces contamination, unintentional doping, and mechanical stress, [5][6][7] which adversely impact the physical integrity and electrical performance [8] of the graphene layer. The significant challenge involved in carrying out this seemingly straightforward task is reflected by the vast literature on large-scale transfer processes. Second, metallic contamination levels in transferred CVD graphene grown on Cu are typically well-above the specifications requested for BEOL integration. [6] Clearly, asThe adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction9° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm 2 V −1 s −1 . The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-ofline integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.

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Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition

Cited by 17 publications

References 87 publications

Wafer-scale transfer-free process of multi-layered graphene grown by chemical vapor deposition

Wafer-scale transfer-free process of multi-layered graphene grown by chemical vapor deposition

Strong optical nonlinearity of ultrathin graphitic films synthesized on dielectric substrates

Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene

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