Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Abstract

Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties. This type of nonvolatile memory consists of a simple unit structure with the processed and solidified bio-organic-based thin film sandwiched between two electrodes. Its memory characteristics are significantly affected by the resistive-switching mechanism. However, to date, the reported mechanisms are very diverse and scattered, and to our best knowledge, there is no literature that reviewed comprehensively the mechanisms of resistive switching in bio-organic-based thin films. Therefore, the objective of this article is to critically analyze data related to the mechanisms of the bio-organic-based RRAM since it was first reported. Based on the pool of literature, three types of mechanisms are categorized, namely electronic, electrochemical, and thermochemical, and the naming is well justified based on the principle of operation. The determining factors and roles of bio-organic material and the two electrodes in governing the three mechanisms have been analyzed, reviewed, discussed, and compared.

Application of Poly-L-Lysine for Tailoring Graphene Oxide Mediated Contact Formation between Lithium Titanium Oxide LTO Surfaces for Batteries

“…Changes in the 10-mV range have been reported for biomolecules adsorbed on different surfaces and forming thin layers [ 58 ]. The carrier conduction process depends on the work function differences of LTO and graphene and LUMO and HOMO of the PLL thin film [ 59 ], suggesting a conductivity change in the system.…”

Resistive Switching Characteristics of Fullerene (C60) in Polymannose Thin Film

“…Based on the slope at region A, it can be concluded that either a trap‐fill limited and/or a trap‐free conduction mechanism dominates in the low voltage region. [ 6,15 ] It is highly possible that due to the incorporation of C60, carriers can be consistently trapped by C60 and contributed to a higher resistance with a less steep slope as shown in region A. At higher voltages in region B, the conduction of carriers is governed by a trap‐fill limited conduction mechanism, which is similar to carrier conduction in the bulk polymannose thin film without C60.…”

“…Hence, an interlocking effect of C60 with polymmanose may contribute to the reduction of V SET as the concentration of C60 increases. It is unlikely that the conductive paths are metallic as the formation of these metallic filaments must be initiated by a redox reaction from TE, [ 6,16 ] but in this work an inert electrode was used.…”

“…[1][2][3][4] Their performances [5] are not comparable with typical inorganic-based counterparts but with their unique properties such as the ease of processing and environmental friendliness provide a great opportunity for bioorganic materials to be explored. Various bioorganic materials [6] have been used to form the active layers for this application. Of these, polymannose, one of plant-based polysaccharides, has been recently reported [7] with encouraging resistive switching performance.…”

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

“…This behavior allows the use of these devices for the implementation of artificial neuronal synapses in neuromorphic systems, since the synaptic weight between two neurons can be electrically adjusted [5]. Various materials have been studied as resistive switching devices, such as perovskites [6], manganites [7], and even organic materials [8]. However, metal oxides are the most widely studied materials [9].…”