Review Paper on New Technology Based Nanoscale Transistor

Talukdar, Banani; P.C, Pradhan; Agarwal, Amit

doi:10.5121/msej.2016.3103

Cited by 3 publications

(2 citation statements)

References 53 publications

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“…The major SCE which effects the performance are summarized in Table-II. The SCE are prominent after down scaling because of presence of high electric field within a small short channel gap which proves to be steppingstone in desired functioning of device [9][10][11][12][13][14][15]. The two major phenomena responsible for these effects includes 1.…”

Section: Fig 1 Single-gate Configuration Of Mosfetmentioning

confidence: 99%

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Singh*,

Kumar

2020

IJITEE

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In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inversion has shown result inform of increase in leakage current, decrease of inversion charge and decrease in the drive current since double-gate MOSFET came into existence, which relies on the exploration of novel higher mobility channel materials which might perform even better than current existing single gate MOSFETs. This paper compares double-gate MOSFET configuration and single-gate MOSFET configuration using different performance parameters and channel material configuration and additionally assessed different channel materials along with its structure orientation and the future applications.

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Section: Fig 1 Single-gate Configuration Of Mosfetmentioning

confidence: 99%

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Singh*,

Kumar

2020

IJITEE

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“…When Andre Geim and Konstantin Novoselov produced and reported the graphene monolayer in 2004, the material attracted considerable attention because of its anomalous band structure and unique properties, like remarkable electron mobility at room temperature, high electron and thermal conductivities, high density, etc [1][2][3][4][5]. In 2010 and 2014, silicon and germanium analogues of graphene were produced and called silicene and germanene, respectively [6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

The effect of buckling on I–V characteristics of symmetric and asymmetric zigzag germanene nanoribbons: a first-principle calculation

Arjmand¹,

Tagani²,

Soleimani³

2017

J. Phys. D: Appl. Phys.

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In this paper, we consider zigzag-edge germanene nanoribbons with small buckling and even (symmetric) or odd (asymmetric) widths. Although the band structures of these two type structures are the same, they are noticeably different in terms of conductivity and current. In previous works on silicene, the role of buckling to dominate the effect of symmetry has been ignored and just the buckling changes of the symmetry space group from σ to C 2 are shown. In this case, buckling is the main factor responsible for differences in conductivity and current. Fluorine, hydroxyl, and hydrogen are used to passivate the nanoribbon edges. Results show that the current and conductivity are strongly dependent on the kinds of substitutional atoms/ groups used to passivate the structure. It is found that symmetry breaking is not the only effective factor in the creation of current-buckling and backscattering are also important.

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