Revision of the standard hydrodynamic transport model for SOI simulation

Gritsch, Martin; Kosina, H.; Selberherr, S.

doi:10.1109/ted.2002.803645

Cited by 28 publications

(16 citation statements)

References 5 publications

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“…This model is viewed as one of the hierarchy of the quantum hydrodynamic models [12]. In classical hydrodynamic simulations, a four-moments energy transport model is proposed in [14] for simulations of thin body MOSFETs. In this work, Fermi-Dirac statistics and nonparabolic corrections are further included for the performance analysis of MOSFETs on high mobility substrates.…”

Section: -Moments Qet Model Based On Fermi-dirac Statisticsmentioning

confidence: 99%

A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

2015

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In this paper, the quantum confinement and short channel effects of Si, Ge, and In 0.53 Ga 0.47 As n-MOSFETs are evaluated. Both bulk and double-gate structures are simulated using a quantum energy transport model based on Fermi-Dirac statistics. Nonparabolic band effects are further considered. The QET model allows us to simulate carrier transport including quantum confinement and hot carrier effects. The charge control by the gate is reduced in the Ge and In 0.53 Ga 0.47 As bulk n-MOSFETs due to the low effective mass and high permittivity. This charge control reduction induces the degradation of short channel effects. In double-gate structures, different improvements of drain induced barrier lowering (DIBL) and subthreshold slope (SS) are seen. The double-gate structure is effective in the suppression of DIBL for all channel materials. The SS degradation depends on channel materials even in double-gate structure.

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Section: -Moments Qet Model Based On Fermi-dirac Statisticsmentioning

confidence: 99%

A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

2015

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“…The QET and quantum drift diffusion (QDD) models are further derived by using a diffusion scaling of the QHD model. For classical hydrodynamic simulations, the closure relation based on the four-moments of the Boltzmann equation has been discussed in [9,10,11], and a fourmoments energy transport (ET) model [12] has been developed for simulations of thin body MOSFETs.…”

Section: Four-moments Quantum Energy Transport Model 21 a Boltzmannmentioning

confidence: 99%

A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs

Sho

Odanaka

Hiroki³

2015

JASSE

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Abstract. In this paper, a Fermi-Dirac statistics based quantum energy transport (FDQET) model is developed for numerical simulations of high mobility MOSFETs. The QET model allows simulations of carrier transport including quantum confinement and hot carrier effects. Fermi-Dirac statistics are further considered for the analysis of device characteristics with high degeneracy material such as In 0.53 Ga 0.47 As. Numerical stability and convergence are achieved by developing an iterative solution method used when Fermi-Dirac statistics are modeled. Numerical results for Si, Ge and In 0.53 Ga 0.47 As bulk n-MOSFETs are presented. The FDQET model allows us to evaluate the device characteristics with high degeneracy material such as In 0.53 Ga 0.47 As.

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“…In addition, the recent studies of silicon on insulator (SOI) devices by the classical HDM , showed certain anomalies due to lack of a heat evacuation mechanism at the insulator interface [133]. So me authors suggested to cure this problem by considering a tensorial temperature and modifying the closure condition for energy flu x term [134]. Othors authors suggested coupling the lattice heat equation to the set of HD equations [135].…”

Section: Lattice Heat Conservation Equationmentioning

confidence: 99%

“…The HDM has been widely used in the study of aerodynamic flow, and was suggested to study the hot electron transport in mu ltivalley semiconductor devices by Bløtekjaer [29]. Since then, several contributions have been introduced to improve the hot carrier transport models in semiconductors and the HDM in particular [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47]. For instance, the nonparabolicity of energy bands has been included in the HDM for the first time by Thoma et al [38].…”

Section: Introductionmentioning

confidence: 99%

“…Also, the number of considered mo ments in the HDM has been increased in order to imp rove the HDM accuracy [44]. Unfortunately, all the added improvements to the HDM were associated with the addition of a huge number of new physical parameters [45][46]. On the other hand, so me authors neglected the role of some important parameters in order to reduce the complexity of the model.…”

Section: Introductionmentioning

confidence: 99%

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Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Revision of the standard hydrodynamic transport model for SOI simulation

Cited by 28 publications

References 5 publications

A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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