2018
DOI: 10.1016/j.vacuum.2017.10.020
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RF bias to suppress post-oxidation of μc-Si:H films deposited by inductively-coupled plasma using a planar RF resonant antenna

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Cited by 2 publications
(2 citation statements)
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“…The results of this EM model are compared with experiments performed on a 1.2 1.2 ´m2 planar antenna which consists of an array of identical resonant circuit elements. When excited at one of its resonance frequencies, the RF resonant antenna develops very high currents within its structure, which can be used as an ICP source [19,[25][26][27][28][29]. Due to the spatially distributed resonant network, they are good candidates for large area plasma processing, with a particular advantage concerning impedance matching and power transfer efficiency because of their high and real input impedance.…”
Section: Existing Models Of Icp Sourcesmentioning
confidence: 99%
See 1 more Smart Citation
“…The results of this EM model are compared with experiments performed on a 1.2 1.2 ´m2 planar antenna which consists of an array of identical resonant circuit elements. When excited at one of its resonance frequencies, the RF resonant antenna develops very high currents within its structure, which can be used as an ICP source [19,[25][26][27][28][29]. Due to the spatially distributed resonant network, they are good candidates for large area plasma processing, with a particular advantage concerning impedance matching and power transfer efficiency because of their high and real input impedance.…”
Section: Existing Models Of Icp Sourcesmentioning
confidence: 99%
“…However, the peaks in figure 9(b) are due to the m=8 mode structure of the resonant antenna, not the individual legs. Note that low pressure ICP operation brings the advantage of no powder formation in deposition plasmas [29].…”
Section: Plasma Uniformitymentioning
confidence: 99%