RF characteristics of a high voltage LDMOSFET

Abstract

Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed in this paper. The simulated results of this LDMOS RF switch exhibit excellent agreement to the measured data over the frequency range from DC to 3GHz. Based on this small signal LDMOSFET model, advantageous RF IC applications with LDMOS technology could be realized.

Integration of CMOS Logic Circuits with Lateral Power MOSFET

“…However, the drain-source blocking voltage is in the range of 100 volts, and the current driving capability of this device is usually high. The advantages of LDMOSFET [1][2][3] are that it requires only a small input current and high switching speed can be controlled with a very small gate current. Hence, LDMOSFET has found an increasing application in gate driver IC and high power converters [4,5].…”

An accurate parameter extraction method for RF LDMOSFET small-signal model

“…The most important procedure for extracting model parameters arises from the determination of the extrinsic elements, as it strongly affects the extraction result of the whole small-signal model. Earlier works often didn't take the substrate effect into account [2] , and obtained the extrinsic resistances by simplified equations Re( ) , Re( ) ,and Re( ) at zero-bias, which is limited to low frequencies, as it omits the influence of the lossy Si substrate region beneath the drain-bulk junction. The method in [3], [4], and [5] extracting parasitic resistances in strong inversion( , 0) neglects the dependence of drain resistance on drain-source voltage, which does not apply to LDMOSFET.…”